Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/151387
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dc.contributor.authorDeng, Yaen_US
dc.contributor.authorLai, Yuanmingen_US
dc.contributor.authorZhao, Xiaoxuen_US
dc.contributor.authorWang, Xiaoweien_US
dc.contributor.authorZhu, Chaoen_US
dc.contributor.authorHuang, Keen_US
dc.contributor.authorZhu, Chaoen_US
dc.contributor.authorZhou, Jiadongen_US
dc.contributor.authorZeng, Qingshengen_US
dc.contributor.authorDuan, Ruihuanen_US
dc.contributor.authorFu, Qundongen_US
dc.contributor.authorKang, Lixingen_US
dc.contributor.authorLiu, Yangen_US
dc.contributor.authorPennycook, Stephen J.en_US
dc.contributor.authorWang, Renshaw Xiaoen_US
dc.contributor.authorLiu, Zhengen_US
dc.date.accessioned2021-06-14T01:12:16Z-
dc.date.available2021-06-14T01:12:16Z-
dc.date.issued2020-
dc.identifier.citationDeng, Y., Lai, Y., Zhao, X., Wang, X., Zhu, C., Huang, K., Zhu, C., Zhou, J., Zeng, Q., Duan, R., Fu, Q., Kang, L., Liu, Y., Pennycook, S. J., Wang, R. X. & Liu, Z. (2020). Controlled growth of 3R phase tantalum diselenide and its enhanced superconductivity. Journal of the American Chemical Society, 142(6), 2948-2955. https://dx.doi.org/10.1021/jacs.9b11673en_US
dc.identifier.issn1520-5126en_US
dc.identifier.urihttps://hdl.handle.net/10356/151387-
dc.description.abstractTransition metal dichalcogenides (TMDs) have become a playground for exploring rich physical phenomena like superconductivity and charge-density-waves (CDW). Here, we report the synthesis of the atom-thin TaSe2 with a rare 3R phase and enhanced superconductivity. The 3R phase is achieved by an ambient pressure chemical vapor deposition (CVD) strategy and confirmed by the high-resolution aberration-corrected STEM. Low-temperature transport data reveal an enhanced superconducting transition temperature (Tc) of 1.6 K in the 3R-TaSe2, which undoubtedly breaks the traditional perception of TaSe2 crystal as a material with Tc close to 0 K. This work demonstrates the strength of ambient pressure CVD in the exploration of crystal polymorphism, highlights a decisive role of layer stacking order in the superconducting transition, and provides fresh insights on manipulating crystal structures to gain access to enhanced Tc.en_US
dc.description.sponsorshipMinistry of Education (MOE)en_US
dc.language.isoenen_US
dc.relation.ispartofJournal of the American Chemical Societyen_US
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in Journal of the American Chemical Society, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/jacs.9b11673en_US
dc.subjectEngineering::Materialsen_US
dc.titleControlled growth of 3R phase tantalum diselenide and its enhanced superconductivityen_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen_US
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.identifier.doi10.1021/jacs.9b11673-
dc.description.versionAccepted versionen_US
dc.identifier.pmid31961673-
dc.identifier.scopus2-s2.0-85079318934-
dc.identifier.issue6en_US
dc.identifier.volume142en_US
dc.identifier.spage2948en_US
dc.identifier.epage2955en_US
dc.subject.keywordsCrystalsen_US
dc.subject.keywordsSuperconducting Transitionen_US
item.grantfulltextopen-
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