Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/151387
Title: Controlled growth of 3R phase tantalum diselenide and its enhanced superconductivity
Authors: Deng, Ya
Lai, Yuanming
Zhao, Xiaoxu
Wang, Xiaowei
Zhu, Chao
Huang, Ke
Zhu, Chao
Zhou, Jiadong
Zeng, Qingsheng
Duan, Ruihuan
Fu, Qundong
Kang, Lixing
Liu, Yang
Pennycook, Stephen J.
Wang, Renshaw Xiao
Liu, Zheng
Keywords: Engineering::Materials
Issue Date: 2020
Source: Deng, Y., Lai, Y., Zhao, X., Wang, X., Zhu, C., Huang, K., Zhu, C., Zhou, J., Zeng, Q., Duan, R., Fu, Q., Kang, L., Liu, Y., Pennycook, S. J., Wang, R. X. & Liu, Z. (2020). Controlled growth of 3R phase tantalum diselenide and its enhanced superconductivity. Journal of the American Chemical Society, 142(6), 2948-2955. https://dx.doi.org/10.1021/jacs.9b11673
Journal: Journal of the American Chemical Society
Abstract: Transition metal dichalcogenides (TMDs) have become a playground for exploring rich physical phenomena like superconductivity and charge-density-waves (CDW). Here, we report the synthesis of the atom-thin TaSe2 with a rare 3R phase and enhanced superconductivity. The 3R phase is achieved by an ambient pressure chemical vapor deposition (CVD) strategy and confirmed by the high-resolution aberration-corrected STEM. Low-temperature transport data reveal an enhanced superconducting transition temperature (Tc) of 1.6 K in the 3R-TaSe2, which undoubtedly breaks the traditional perception of TaSe2 crystal as a material with Tc close to 0 K. This work demonstrates the strength of ambient pressure CVD in the exploration of crystal polymorphism, highlights a decisive role of layer stacking order in the superconducting transition, and provides fresh insights on manipulating crystal structures to gain access to enhanced Tc.
URI: https://hdl.handle.net/10356/151387
ISSN: 1520-5126
DOI: 10.1021/jacs.9b11673
Schools: School of Physical and Mathematical Sciences 
School of Materials Science and Engineering 
Rights: This document is the Accepted Manuscript version of a Published Work that appeared in final form in Journal of the American Chemical Society, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/jacs.9b11673
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:SPMS Journal Articles

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