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|Title:||Nonvolatile multistates memories for high-density data storage||Authors:||Cao, Qiang
Wang, Renshaw Xiao
|Keywords:||Engineering::Materials||Issue Date:||2020||Source:||Cao, Q., Lü, W., Wang, R. X., Guan, X., Wang, L., Yan, S., Wu, T. & Wang, X. (2020). Nonvolatile multistates memories for high-density data storage. ACS Applied Materials and Interfaces, 12(38), 42449-42471. https://dx.doi.org/10.1021/acsami.0c10184||Journal:||ACS Applied Materials and Interfaces||Abstract:||In the current information age, the realization of memory devices with energy efficient design, high storage density, nonvolatility, fast access, and low cost is still a great challenge. As a promising technology to meet these stringent requirements, nonvolatile multistates memory (NMSM) has attracted lots of attention over the past years. Owing to the capability to store data in more than a single bit (0 or 1), the storage density is dramatically enhanced without scaling down the memory cell, making memory devices more efficient and less expensive. Multistates in a single cell also provide an unconventional in-memory computing platform beyond the Von Neumann architecture and enable neuromorphic computing with low power consumption. In this review, an in-depth perspective is presented on the recent progress and challenges on the device architectures, material innovation, working mechanisms of various types of NMSMs, including flash, magnetic random-access memory (MRAM), resistive random-access memory (RRAM), ferroelectric random-access memory (FeRAM), and phase-change memory (PCM). The intriguing properties and performance of these NMSMs, which are the key to realizing highly integrated memory hierarchy, are discussed and compared.||URI:||https://hdl.handle.net/10356/151391||ISSN:||1944-8244||DOI:||10.1021/acsami.0c10184||Rights:||This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials and Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsami.0c10184||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||SPMS Journal Articles|
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