Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/151440
Title: Band structure engineering of interfacial semiconductors based on atomically thin lead iodide crystals
Authors: Sun, Yan
Zhou, Zishu
Huang, Zhen
Wu, Jiangbin
Zhou, Liujiang
Cheng, Yang
Liu, Jinqiu
Zhu, Chao
Yu, Maotao
Yu, Peng
Zhu, Wei
Liu, Yue
Zhou, Jian
Liu, Bowen
Xie, Hongguang
Cao, Yi
Li, Hai
Wang, Xinran
Liu, Kaihui
Wang, Xiaoyong
Wang, Jianpu
Wang, Lin
Huang, Wei
Keywords: Engineering::Materials
Issue Date: 2019
Source: Sun, Y., Zhou, Z., Huang, Z., Wu, J., Zhou, L., Cheng, Y., Liu, J., Zhu, C., Yu, M., Yu, P., Zhu, W., Liu, Y., Zhou, J., Liu, B., Xie, H., Cao, Y., Li, H., Wang, X., Liu, K., ...Huang, W. (2019). Band structure engineering of interfacial semiconductors based on atomically thin lead iodide crystals. Advanced Materials, 31(17), 1806562-. https://dx.doi.org/10.1002/adma.201806562
Journal: Advanced Materials 
Abstract: To explore new constituents in two-dimensional (2D) materials and to combine their best in van der Waals heterostructures is in great demand as being a unique platform to discover new physical phenomena and to design novel functionalities in interface-based devices. Herein, PbI2 crystals as thin as a few layers are synthesized, particularly through a facile low-temperature solution approach with crystals of large size, regular shape, different thicknesses, and high yields. As a prototypical demonstration of band engineering of PbI2-based interfacial semiconductors, PbI2 crystals are assembled with several transition metal dichalcogenide monolayers. The photoluminescence of MoS2 is enhanced in MoS2/PbI2 stacks, while a dramatic photoluminescence quenching of  WS2 and WSe2 is revealed in WS2/PbI2 and WSe2/PbI2 stacks. This is attributed to the effective heterojunction formation between PbI2 and these monolayers; type I band alignment in MoS2/PbI2 stacks, where fast-transferred charge carriers accumulate in MoS2 with high emission efficiency, results in photoluminescence enhancement, and type II in WS2/PbI2 and WSe2/PbI2 stacks, with separated electrons and holes suitable for light harvesting, results in photoluminescence quenching. The results demonstrate that MoS2, WS2, and WSe2 monolayers with similar electronic structures show completely distinct light–matter interactions when interfacing with PbI2, providing unprecedented capabilities to engineer the device performance of 2D heterostructures.
URI: https://hdl.handle.net/10356/151440
ISSN: 0935-9648
DOI: 10.1002/adma.201806562
Rights: © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. All rights reserved.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MSE Journal Articles

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