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Title: In-plane anisotropic properties of 1T′-MoS2 layers
Authors: Nam, Gwang-Hyeon
He, Qiyuan
Wang, Xingzhi
Yu, Yifu
Chen, Junze
Zhang, Kang
Yang, Zhenzhong
Hu, Dianyi
Lai, Zhuangchai
Li, Bing
Xiong, Qihua
Zhang, Qing
Gu, Lin
Zhang, Hua
Keywords: Engineering::Materials
Issue Date: 2019
Source: Nam, G., He, Q., Wang, X., Yu, Y., Chen, J., Zhang, K., Yang, Z., Hu, D., Lai, Z., Li, B., Xiong, Q., Zhang, Q., Gu, L. & Zhang, H. (2019). In-plane anisotropic properties of 1T′-MoS2 layers. Advanced Materials, 31(21), 1807764-.
Project: MOE2015-T2-2-057
Journal: Advanced Materials 
Abstract: Crystal phases play a key role in determining the physicochemical properties of a material. To date, many phases of transition metal dichalcogenides have been discovered, such as octahedral (1T), distorted octahedral (1T′), and trigonal prismatic (2H) phases. Among these, the 1T′ phase offers unique properties and advantages in various applications. Moreover, the 1T′ phase consists of unique zigzag chains of the transition metals, giving rise to interesting in-plane anisotropic properties. Herein, the in-plane optical and electrical anisotropies of metastable 1T′-MoS2 layers are investigated by the angle-resolved Raman spectroscopy and electrical measurements, respectively. The deconvolution of J1 and J2 peaks in the angle-resolved Raman spectra is a key characteristic of high-quality 1T′-MoS2 crystal. Moreover, it is found that its electrocatalytic performance may be affected by the crystal orientation of anisotropic material due to the anisotropic charge transport.
ISSN: 0935-9648
DOI: 10.1002/adma.201807764
Rights: © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. All rights reserved.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MSE Journal Articles

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