Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/151833
Title: Dynamical evolution of anisotropic response of type-II Weyl semimetal TaIrTe₄ under ultrafast photoexcitation
Authors: Zhuo, Xiao
Lai, Jiawei
Yu, Peng
Yu, Ze
Ma, Junchao
Lu, Wei
Liu, Miao
Liu, Zheng
Sun, Dong
Keywords: Engineering::Materials
Issue Date: 2021
Source: Zhuo, X., Lai, J., Yu, P., Yu, Z., Ma, J., Lu, W., Liu, M., Liu, Z. & Sun, D. (2021). Dynamical evolution of anisotropic response of type-II Weyl semimetal TaIrTe₄ under ultrafast photoexcitation. Light: Science & Applications, 10(1), 101-. https://dx.doi.org/10.1038/s41377-021-00546-1
Project: NRF-RF2013-08
MOE2016-T2-2-153
MOE2017-T2-2-136
Journal: Light: Science & Applications
Abstract: Layered type-II Weyl semimetals, such as WTe₂, MoTe₂, and TaIrTe₄ have been demonstrated as a supreme photodetection material with topologically enhanced responsivity and specific sensitivity to the orbital angular momentum of light. Toward future device applications with high performance and ultrafast response, it is necessary to understand the dynamical processes of hot carriers and transient electronic properties of these materials under photoexcitation. In this work, mid-infrared ultrafast spectroscopy is performed to study the dynamical evolution of the anisotropic response of TaIrTe₄. The dynamical relaxation of photoexcited carriers exhibits three exponential decay components relating to optical/acoustic phonon cooling and subsequent heat transfer to the substrate. The ultrafast transient dynamics imply that TaIrTe₄ is an ideal material candidate for ultrafast optoelectronic applications, especially in the long-wavelength region. The angle-resolved measurement of transient reflection reveals that the reflectivity becomes less anisotropic in the quasi-equilibrium state, indicating a reduction in the anisotropy of dynamical conductivity in presence of photoexcited hot carriers. The results are indispensable in material engineering for polarization-sensitive optoelectronics and high field electronics.
URI: https://hdl.handle.net/10356/151833
ISSN: 2095-5545
DOI: 10.1038/s41377-021-00546-1
Rights: © 2021 The Author(s). Open Access. This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
Fulltext Permission: open
Fulltext Availability: With Fulltext
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