Please use this identifier to cite or link to this item:
Title: Performance analysis on active rectifier structures for inductively powered application
Authors: Low, Qiong Wei
Zhou, Mi
Siek, Liter
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2017
Source: Low, Q. W., Zhou, M. & Siek, L. (2017). Performance analysis on active rectifier structures for inductively powered application. 2016 International Symposium on Integrated Circuits (ISIC), 1-4.
Project: 11235100003
Abstract: In this study, two active rectifier structures which are the full-wave rectifier and the two-stage rectifier for inductively powered application are analyzed and presented. This paper provides a precise analysis on the differences between the two structures and investigates the best load condition for the maximal performance in each of the structures respectively. Mathematical equations are derived to model the power losses and the power conversion efficiency. Moreover, the estimated values from the derived equations are shown to be tallied with the simulation results. Both of the structures are fabricated in standard CMOS 0.18μm AMS process. Simulation results show that they achieve a peak efficiency of 96.8% and 97.4% respectively at the frequency of 125 kHz with varying AC amplitude of 1.2V-2.5V.
ISBN: 9781467390194
DOI: 10.1109/ISICIR.2016.7829700
Rights: © 2016 IEEE. All rights reserved.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Conference Papers

Page view(s)

Updated on May 15, 2022

Google ScholarTM




Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.