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https://hdl.handle.net/10356/152236
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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Leow, Yoon Hwee | en_US |
dc.contributor.author | Tang, Howard | en_US |
dc.contributor.author | Sun, Zhuochao | en_US |
dc.contributor.author | Siek, Liter | en_US |
dc.date.accessioned | 2021-08-05T02:46:04Z | - |
dc.date.available | 2021-08-05T02:46:04Z | - |
dc.date.issued | 2016 | - |
dc.identifier.citation | Leow, Y. H., Tang, H., Sun, Z. & Siek, L. (2016). A 1 V 103 dB 3rd-order audio continuous-time ΔΣ ADC with enhanced noise shaping in 65 nm CMOS. IEEE Journal of Solid-State Circuits, 51(11), 2625-2638. https://dx.doi.org/10.1109/JSSC.2016.2593777 | en_US |
dc.identifier.issn | 0018-9200 | en_US |
dc.identifier.uri | https://hdl.handle.net/10356/152236 | - |
dc.description.abstract | As technology scales, integrating high resolution ADCs into high fidelity mixed signal systems becomes challenging in advanced CMOS processes. Cascading integrators to achieve high-order filter structures limits the modulation index and compromises on stability at the expense of added hardware and power consumption. To optimize the maximum stable amplitude (MSA) to accommodate a larger input dynamic range, the supply rails have to be expanded, which limited technology choices to those of a larger feature size. This work proposes a 25 kHz 3rd-order continuous-time ΔΣ modulator (CTΔΣM) utilizing a 5-bit SAR quantizer, enabling noise coupling (NC) to be possible in a typical nanoscale CMOS 65 nm technology with VDD of 1 V. Mismatches in SAR comparator and DAC array are mitigated with a proposed calibration scheme while CM mismatches are solved by a floating differential charge storage capacitor (FDCSC) coupling method. To allow sufficient time for SAR bit cycling and noise charge feedback settling, 1 Ts excess loop delay (ELD) is compensated with digital differentiation that minimizes both the power and complexity of the auxiliary feedback DAC. The prototype obtained DR/SNR/SNDR of 103.1 dB/100.1 dB/95.2 dB while dissipating 0.8 mW, hence achieving a FoMSNDR and FoMschreier of 0.34 pJ/level and 177.9 dB, respectively. | en_US |
dc.language.iso | en | en_US |
dc.relation.ispartof | IEEE Journal of Solid-State Circuits | en_US |
dc.rights | © 2016 IEEE. All rights reserved. | en_US |
dc.subject | Engineering::Computer science and engineering | en_US |
dc.title | A 1 V 103 dB 3rd-order audio continuous-time ΔΣ ADC with enhanced noise shaping in 65 nm CMOS | en_US |
dc.type | Journal Article | en |
dc.contributor.school | School of Electrical and Electronic Engineering | en_US |
dc.contributor.research | VIRTUS, IC Design Centre of Excellence | en_US |
dc.identifier.doi | 10.1109/JSSC.2016.2593777 | - |
dc.identifier.issue | 11 | en_US |
dc.identifier.volume | 51 | en_US |
dc.identifier.spage | 2625 | en_US |
dc.identifier.epage | 2638 | en_US |
dc.subject.keywords | Continuous-time | en_US |
dc.subject.keywords | Delta-Sigma | en_US |
dc.subject.keywords | Low Voltage | en_US |
dc.subject.keywords | Noise-coupled | en_US |
dc.subject.keywords | NTF Enhancement | en_US |
dc.subject.keywords | Successive Approximation | en_US |
item.grantfulltext | none | - |
item.fulltext | No Fulltext | - |
Appears in Collections: | EEE Journal Articles |
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