Please use this identifier to cite or link to this item:
Title: Design implementation and characterization of JFET based color sensors
Authors: Arumugam Ashviny
Keywords: Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Issue Date: 2021
Publisher: Nanyang Technological University
Source: Arumugam Ashviny (2021). Design implementation and characterization of JFET based color sensors. Master's thesis, Nanyang Technological University, Singapore.
Abstract: Optoelectronics have many industrial and commercial applications such as optical sensing, data storage, color sensing etc. This project is set to build, fabricate and analyze the optical characteristics of Junction Field Effect Transistor. The use of field effect transistors in the field of optical and color sensing applications have been gradually increasing and extensively used for research purpose. Good optical properties, good electrical properties, low cost and easy fabrication methods makes it to be widely used in color sensing applications. One such type of transistor, JFET has been taken for study. Absorption coefficient as a function of wavelength is simulated for different width of depletion region using MATLAB software. Conductivity in the central channel region is measured. Subsequently theoretical calculations are performed for ion implantation.
Schools: School of Electrical and Electronic Engineering 
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

Files in This Item:
File Description SizeFormat 
Arumugam Ashviny -Amended Dissertation-FV.pdf
  Restricted Access
1.86 MBAdobe PDFView/Open

Page view(s)

Updated on May 31, 2023

Download(s) 50

Updated on May 31, 2023

Google ScholarTM


Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.