Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/152582
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dc.contributor.authorGheshlaghi, Negaren_US
dc.contributor.authorForoutan-Barenji, Sinaen_US
dc.contributor.authorErdem, Onuren_US
dc.contributor.authorAltintas, Yemlihaen_US
dc.contributor.authorShabani, Farzanen_US
dc.contributor.authorMuhammad Hamza Humayunen_US
dc.contributor.authorDemir, Hilmi Volkanen_US
dc.date.accessioned2021-09-03T00:24:50Z-
dc.date.available2021-09-03T00:24:50Z-
dc.date.issued2021-
dc.identifier.citationGheshlaghi, N., Foroutan-Barenji, S., Erdem, O., Altintas, Y., Shabani, F., Muhammad Hamza Humayun & Demir, H. V. (2021). Self-resonant microlasers of colloidal quantum wells constructed by direct deep patterning. Nano Letters, 21(11), 4598-4605. https://dx.doi.org/10.1021/acs.nanolett.1c00464en_US
dc.identifier.issn1530-6984en_US
dc.identifier.urihttps://hdl.handle.net/10356/152582-
dc.description.abstractHere, the first account of self-resonant fully colloidal μ-lasers made from colloidal quantum well (CQW) solution is reported. A deep patterning technique is developed to fabricate well-defined high aspect-ratio on-chip CQW resonators made of grating waveguides and in-plane reflectors. The fabricated waveguide-coupled laser, enabling tight optical confinement, assures in-plane lasing. CQWs of the patterned layers are closed-packed with sharp edges and residual-free lifted-off surfaces. Additionally, the method is successfully applied to various nanoparticles including colloidal quantum dots and metal nanoparticles. It is observed that the patterning process does not affect the nanocrystals (NCs) immobilized in the attained patterns and the different physical and chemical properties of the NCs remain pristine. Thanks to the deep patterning capability of the proposed method, patterns of NCs with subwavelength lateral feature sizes and micron-scale heights can possibly be fabricated in high aspect ratios.en_US
dc.description.sponsorshipAgency for Science, Technology and Research (A*STAR)en_US
dc.description.sponsorshipNational Research Foundation (NRF)en_US
dc.language.isoenen_US
dc.relationNRF-NRFI2016-08en_US
dc.relation152 73 00025en_US
dc.relation.ispartofNano Lettersen_US
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acs.nanolett.1c00464.en_US
dc.subjectScience::Physicsen_US
dc.subjectEngineering::Electrical and electronic engineeringen_US
dc.titleSelf-resonant microlasers of colloidal quantum wells constructed by direct deep patterningen_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen_US
dc.contributor.organizationBilkent Universit, Turkeyen_US
dc.contributor.researchLUMINOUS! Centre of Excellence for Semiconductor Lighting & Displaysen_US
dc.contributor.researchCentre for Optical Fibre Technologyen_US
dc.contributor.researchThe Photonics Instituteen_US
dc.identifier.doi10.1021/acs.nanolett.1c00464-
dc.description.versionAccepted versionen_US
dc.identifier.pmid34028277-
dc.identifier.scopus2-s2.0-85108021361-
dc.identifier.issue11en_US
dc.identifier.volume21en_US
dc.identifier.spage4598en_US
dc.identifier.epage4605en_US
dc.subject.keywordsSemiconductor Nanocrystalsen_US
dc.subject.keywordsDirect Nanopatterningen_US
dc.description.acknowledgementThis research was supported in part by the National Research Foundation, Prime Minister’s Office, Singapore, under its Investigatorship Program (NRF-NRFI2016-08) and the Singapore Agency for Science, Technology and Research (A*STAR) SERC Pharos Program under Grant 152 73 00025. The authors also acknowledge financial support from TÜ BITAK through 115E679, 115F297, and 117E713 ̇ programs. O.E. acknowledges TÜ BITAK for ̇ financial support through the BIDEB-2211 program. H.V.D. gratefully acknowledges TÜ BA.en_US
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