Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/152766
Title: High-performance back-illuminated Ge₀.₉₂Sn₀.₀₈/Ge multiple-quantum-well photodetector on Si platform for SWIR detection
Authors: Wu, Shaoteng
Xu, Shengqiang
Zhou, Hao
Jin, Yuhao
Chen, Qimiao
Huang, Yi-Chiau
Zhang, Lin
Gong, Xiao
Tan, Chuan Seng
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2021
Source: Wu, S., Xu, S., Zhou, H., Jin, Y., Chen, Q., Huang, Y., Zhang, L., Gong, X. & Tan, C. S. (2021). High-performance back-illuminated Ge₀.₉₂Sn₀.₀₈/Ge multiple-quantum-well photodetector on Si platform for SWIR detection. IEEE Journal of Selected Topics in Quantum Electronics, 28(2), 8200109-. https://dx.doi.org/10.1109/JSTQE.2021.3078894
Project: NRF–CRP19–2017–01
2019-T1-002-040 (RG147/19 (S)
Journal: IEEE Journal of Selected Topics in Quantum Electronics
Abstract: Recently, high-performance GeSn photodiodes with external light illuminated on the device top surface have been demonstrated on various platforms. However, for image sensing systems with a focal-plane array (FPA), the front-illuminated sensors usually suffer from area limitations. Here, we report high-performance back-illuminated Ge0.92Sn0.08/Ge multiple-quantum-well (MQW) p-i-n photodiode on 300-mm silicon substrate, which was realized entirely by complementary metal-oxide-semiconductor (CMOS) compatible processes. A broadband photo response between 1,000-2,200 nm was observed, and the responsivity is 0.2850 and 0.0085A/W at 1,550 and 2,000 nm, respectively. A specific detectivity larger than 109 cm∙Hz1/2/W was achieved between 1,050 and 1,900 nm, covering all the conventional telecommunication bands (O to U band). Furthermore, the influence of the anti-reflective layers also was studied in detail. The result shows the black Si surface enhances more photo current between 1,000-1,500 nm while the SiO2 layer (400-nm-thickness) increases more current beyond 1,500 nm. The 3-dB bandwidth was calculated to be up to 8 GHz for a mesa with a diameter of 20 μm at -2 V. Our experiments demonstrated the high-detectivity and high-speed back-illuminated GeSn/Ge MQW photodiode with the potential applications in image sensing systems operated in the short-wave infrared (SWIR) range.
URI: https://hdl.handle.net/10356/152766
ISSN: 1077-260X
DOI: 10.1109/JSTQE.2021.3078894
Rights: © 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: https://doi.org/[Article URL/DOI].
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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