Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/152824
Title: Comparative analysis of Si, SiC and GaN field-effect transistors for DC solid-state power controllers in more electric aircraft
Authors: Marwaha, Mridul
Sathik, Mohamed Halick
Satpathi, Kuntal
Yu, Yang
Sasongko, Firman
Pou, Josep
Gajanayake, Chandana
Gupta, Amit Kumar
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2021
Source: Marwaha, M., Sathik, M. H., Satpathi, K., Yu, Y., Sasongko, F., Pou, J., Gajanayake, C. & Gupta, A. K. (2021). Comparative analysis of Si, SiC and GaN field-effect transistors for DC solid-state power controllers in more electric aircraft. 2021 IEEE 12th Energy Conversion Congress & Exposition - Asia (ECCE-Asia), 592-597. https://dx.doi.org/10.1109/ECCE-Asia49820.2021.9479031
Abstract: A dc solid-state power controller (SSPC) is a semiconductor-based circuit breaker used for fault isolation in aerospace applications. Device selection is important to ensure the reliability and performance of the SSPC. In this paper, Si, SiC, and GaN field-effect transistors are compared under steady-state and transient conditions. Experimental results are presented to evaluate the performance and characteristics.
URI: https://hdl.handle.net/10356/152824
ISBN: 9781728163444
DOI: 10.1109/ECCE-Asia49820.2021.9479031
Rights: © 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: https://doi.org/10.1109/ECCE-Asia49820.2021.9479031.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Conference Papers

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