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Title: Systematic study on photoexcited carrier dynamics related to defects in GeSn Films with low Sn content at room temperature
Authors: Son, Bongkwon
Zhang, Lin
Jung, Yongduck
Zhou, Hao
Nam, Donguk
Tan, Chuan Seng
Keywords: Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2021
Source: Son, B., Zhang, L., Jung, Y., Zhou, H., Nam, D. & Tan, C. S. (2021). Systematic study on photoexcited carrier dynamics related to defects in GeSn Films with low Sn content at room temperature. Semiconductor Science and Technology, 36(12), 125018-.
Project: NRF–CRP19–2017–01
2019-T1-002-040 (RG147/19)
Journal: Semiconductor Science and Technology
Abstract: Germanium-Tin (GeSn) alloys have received much attention thanks to their optical/electrical properties and their operation in the mid-infrared range. However, dislocations/defects in GeSn films serve as trap states, limiting radiative recombination/generation via band-edges. In this work, the impact of the trap states in GeSn with varying Sn contents is investigated. The systematic study reveals that the defects/dislocations in GeSn contribute to the carrier dynamics, mainly originated from the trap states near GeSn/Ge interface. Through photoluminescence (PL) study, the broad PL peak of the trap state for GeSn exists at ~0.57 eV. The increase in Sn content mitigates the trap-related carrier dynamics. Besides, the increase in GeSn thickness effectively suppresses the interface-related carrier dynamic. By increasing thickness from 180 to 1,000 nm, the external quantum efficiency is enhanced by ~10×. This study provides a comprehensive understanding of trap-related carrier dynamics in a GeSn material system at room temperature.
ISSN: 0268-1242
DOI: 10.1088/1361-6641/ac2fb4
Schools: School of Electrical and Electronic Engineering 
Organisations: Singapore-MIT Alliance for Research and Technology
Rights: © 2021 IOP Publishing Ltd. All rights reserved. This is an author-created, un-copyedited version of an article accepted for publication in Semiconductor Science and Technology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The definitive publisher authenticated version is available online at
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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