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https://hdl.handle.net/10356/153185
Title: | A 0.007 mm² 0.6 V 6 MS/s low-power double rail-to-rail SAR ADC in 65-nm CMOS | Authors: | Jo, Yong-Jun Kim, Ju Eon Baek, Kwang-Hyun Kim, Tony Tae-Hyoung |
Keywords: | Engineering::Electrical and electronic engineering::Integrated circuits | Issue Date: | 2021 | Source: | Jo, Y., Kim, J. E., Baek, K. & Kim, T. T. (2021). A 0.007 mm² 0.6 V 6 MS/s low-power double rail-to-rail SAR ADC in 65-nm CMOS. IEEE Transactions On Circuits and Systems II: Express Briefs, 68(9), 3088-3092. https://dx.doi.org/10.1109/TCSII.2021.3097126 | Journal: | IEEE Transactions on Circuits and Systems II: Express Briefs | Abstract: | A 0.007mm 2 0.6V 6MS/s 10b double rail-to-rail input range SAR ADC is implemented in 65-nm technology. The extended input range broadens the applications of the low-power SAR ADCs such as compute-in-memory. The proposed ADC occupies less area since it only needs additional two series-connected capacitors and a differential-difference comparator for double rail-to-rail operation. The set-and-down operation reduces the input-referred noise of the comparator by over ten times than complementary switching. The novel metal-insulator-metal and metal-oxide-metal capacitor hybrid cap-DAC architecture minimize the gain error of ADC. The prototype achieves SNR of 53.90-dB, SNDR of 52.12-dB, and SFDR of 60.39-dB, power of 12.98- μW, and FoM of 6.6-fJ/conv.-step. | URI: | https://hdl.handle.net/10356/153185 | ISSN: | 1549-7747 | DOI: | 10.1109/TCSII.2021.3097126 | Schools: | School of Electrical and Electronic Engineering | Organisations: | Chung-Ang University | Research Centres: | Centre for Integrated Circuits and Systems | Rights: | © 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: https://doi.org/10.1109/TCSII.2021.3097126. | Fulltext Permission: | open | Fulltext Availability: | With Fulltext |
Appears in Collections: | EEE Journal Articles |
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