Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/153395
Title: Additives in halide perovskite for blue light-emitting diodes : passivating agents or crystallization modulators?
Authors: Nur Fadilah Jamaludin
Yantara, Natalia
Febriansyah, Benny
Tay, Yeow Boon
Muhammad, Bening Tirta
Laxmi, Shoba
Lim, Swee Sien
Sum, Tze Chien
Mhaisalkar, Subodh
Mathews, Nripan
Keywords: Engineering::Materials::Photonics and optoelectronics materials
Engineering::Materials::Functional materials
Issue Date: 2021
Source: Nur Fadilah Jamaludin, Yantara, N., Febriansyah, B., Tay, Y. B., Muhammad, B. T., Laxmi, S., Lim, S. S., Sum, T. C., Mhaisalkar, S. & Mathews, N. (2021). Additives in halide perovskite for blue light-emitting diodes : passivating agents or crystallization modulators?. ACS Energy Letters, 6, 4265-4272. https://dx.doi.org/10.1021/acsenergylett.1c02232
Project: MOE2018-T2-2-083 
MOE2019-T2-2-097 
MOE-T2EP50120-0004 
NRF-NRFI-2018-04 
Journal: ACS Energy Letters 
Abstract: Successful adoption of defect management and carrier confinement strategies in Ruddlesden-Popper (RP) perovskites has driven the impressive improvements to performance of perovskite-based light-emitting diodes (PeLEDs) seen to date. Although functional additives have been advantageous in mitigating defects, their influence over crystallization behavior of RP (L2Am-1PbmX3m+1) perovskites has yet to be fully studied. This is especially important for blue-emitting mono-halide RP perovskites, where stringent control over m domain distribution is needed for efficient PeLEDs. Herein, we investigate the effect of tri-phenyl-phosphine-oxide (TPPO) on crystallization behaviour of blue RP (PBA2Csm-1PbmBr3m+1) perovskites. Despite TPPO addition, its absence in the resulting film eliminates its role as a passivating agent. Instead, TPPO acts as crystallization and phase distribution modulator – promoting the formation of a narrow distribution of higher m domains with higher Br content. In doing so, an enhancement of ~35% was noted with champion device yielding efficiency of 3.8% at λ of 483 nm.
URI: https://hdl.handle.net/10356/153395
ISSN: 2380-8195
DOI: 10.1021/acsenergylett.1c02232
Schools: School of Materials Science and Engineering 
School of Physical and Mathematical Sciences 
Research Centres: Energy Research Institute @ NTU (ERI@N) 
Rights: This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Energy Letters, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsenergylett.1c02232.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:ERI@N Journal Articles
MSE Journal Articles
SPMS Journal Articles

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