Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/153464
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dc.contributor.authorHou, Kunqien_US
dc.contributor.authorChen, Shuaien_US
dc.contributor.authorZhou, Chengen_US
dc.contributor.authorNguyen, Linh Lanen_US
dc.contributor.authorDananjaya, Putu Andhitaen_US
dc.contributor.authorDuchamp, Martialen_US
dc.contributor.authorBazan, Guillermo C.en_US
dc.contributor.authorLew, Wen Siangen_US
dc.contributor.authorLeong, Wei Linen_US
dc.date.accessioned2021-12-05T06:25:11Z-
dc.date.available2021-12-05T06:25:11Z-
dc.date.issued2021-
dc.identifier.citationHou, K., Chen, S., Zhou, C., Nguyen, L. L., Dananjaya, P. A., Duchamp, M., Bazan, G. C., Lew, W. S. & Leong, W. L. (2021). Operando direct observation of filament formation in resistive switching devices enabled by a topological transformation molecule. Nano Letters, 21(21), 9262-9269. https://dx.doi.org/10.1021/acs.nanolett.1c03180en_US
dc.identifier.issn1530-6984en_US
dc.identifier.urihttps://hdl.handle.net/10356/153464-
dc.description.abstractConductive filaments (CFs) play a critical role in the mechanism of resistive random-access memory (ReRAM) devices. However, in situ detection and visualization of the precise location of CFs are still key challenges. We demonstrate for the first time the use of a π-conjugated molecule which can transform between its twisted and planar states upon localized Joule heating generated within filament regions, thus reflecting the locations of the underlying CFs. Customized patterns of CFs were induced and observed by the π-conjugated molecule layer, which confirmed the hypothesis. Additionally, statistical studies on filaments distribution were conducted to study the effect of device sizes and bottom electrode heights, which serves to enhance the understanding of switching behavior and their variability at device level. Therefore, this approach has great potential in aiding the development of ReRAM technology.en_US
dc.description.sponsorshipAgency for Science, Technology and Research (A*STAR)en_US
dc.description.sponsorshipMinistry of Education (MOE)en_US
dc.language.isoenen_US
dc.relationI1801E0030en_US
dc.relation2019-T2-2-106en_US
dc.relation2019-T2-2-066en_US
dc.relationW1925d0106en_US
dc.relation.ispartofNano Lettersen_US
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acs.nanolett.1c03180.en_US
dc.subjectEngineering::Electrical and electronic engineering::Nanoelectronicsen_US
dc.subjectEngineering::Materials::Functional materialsen_US
dc.titleOperando direct observation of filament formation in resistive switching devices enabled by a topological transformation moleculeen_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.contributor.organizationNational University of Singaporeen_US
dc.contributor.researchCentre for Micro-/Nano-electronics (NOVITAS)en_US
dc.identifier.doi10.1021/acs.nanolett.1c03180-
dc.description.versionAccepted versionen_US
dc.identifier.issue21en_US
dc.identifier.volume21en_US
dc.identifier.spage9262en_US
dc.identifier.epage9269en_US
dc.subject.keywordsReRAMen_US
dc.subject.keywordsπ-Conjugated Moleculeen_US
dc.description.acknowledgementThe authors acknowledge funding support from A*STAR AME IAF-ICP (grant no. I1801E0030) grant. This work is also supported by Ministry of Education (MOE) under AcRF Tier 2 grants (2019-T2-2-106, 2019-T2-2-066) and the National Robotics Programme (W1925d0106).en_US
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item.grantfulltextembargo_20221117-
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Operando Direct Observation of Filament Formation in Resistive Switching Devices Enabled by a Topological Transformation Molecule1.28 MBAdobe PDFUnder embargo until Nov 17, 2022

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