Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/153464
Title: Operando direct observation of filament formation in resistive switching devices enabled by a topological transformation molecule
Authors: Hou, Kunqi
Chen, Shuai
Zhou, Cheng
Nguyen, Linh Lan
Dananjaya, Putu Andhita
Duchamp, Martial
Bazan, Guillermo C.
Lew, Wen Siang
Leong, Wei Lin
Keywords: Engineering::Electrical and electronic engineering::Nanoelectronics
Engineering::Materials::Functional materials
Issue Date: 2021
Source: Hou, K., Chen, S., Zhou, C., Nguyen, L. L., Dananjaya, P. A., Duchamp, M., Bazan, G. C., Lew, W. S. & Leong, W. L. (2021). Operando direct observation of filament formation in resistive switching devices enabled by a topological transformation molecule. Nano Letters, 21(21), 9262-9269. https://dx.doi.org/10.1021/acs.nanolett.1c03180
Project: I1801E0030
2019-T2-2-106 
2019-T2-2-066
W1925d0106 
Journal: Nano Letters
Abstract: Conductive filaments (CFs) play a critical role in the mechanism of resistive random-access memory (ReRAM) devices. However, in situ detection and visualization of the precise location of CFs are still key challenges. We demonstrate for the first time the use of a π-conjugated molecule which can transform between its twisted and planar states upon localized Joule heating generated within filament regions, thus reflecting the locations of the underlying CFs. Customized patterns of CFs were induced and observed by the π-conjugated molecule layer, which confirmed the hypothesis. Additionally, statistical studies on filaments distribution were conducted to study the effect of device sizes and bottom electrode heights, which serves to enhance the understanding of switching behavior and their variability at device level. Therefore, this approach has great potential in aiding the development of ReRAM technology.
URI: https://hdl.handle.net/10356/153464
ISSN: 1530-6984
DOI: 10.1021/acs.nanolett.1c03180
Rights: This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acs.nanolett.1c03180.
Fulltext Permission: embargo_20221117
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles
MSE Journal Articles
SPMS Journal Articles

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