Please use this identifier to cite or link to this item:
Full metadata record
DC FieldValueLanguage
dc.contributor.authorHan, Kunen_US
dc.contributor.authorWang, Hanyuen_US
dc.contributor.authorWu, Liangen_US
dc.contributor.authorCao, Yuen_US
dc.contributor.authorQi, Dong-Chenen_US
dc.contributor.authorLi, Changjianen_US
dc.contributor.authorHuang, Zhenen_US
dc.contributor.authorLi, Xiaoen_US
dc.contributor.authorWang, Renshaw Xiaoen_US
dc.identifier.citationHan, K., Wang, H., Wu, L., Cao, Y., Qi, D., Li, C., Huang, Z., Li, X. & Wang, R. X. (2021). Reversible modulation of metal-insulator transition in VO₂ via chemically-induced oxygen migration. Applied Physics Letters, 119(13), 133102-.
dc.description.abstractMetal-insulator transitions (MIT),an intriguing correlated phenomenon induced by the subtle competition of the electrons' repulsive Coulomb interaction and kinetic energy, is of great potential use for electronic applications due to the dramatic change in resistivity. Here, we demonstrate a reversible control of MIT in VO2 films via oxygen stoichiometry engineering. By facilely depositing and dissolving a water-soluble yet oxygen-active Sr3Al2O6 capping layer atop the VO2 at room temperature, oxygen ions can reversibly migrate between VO2 and Sr3Al2O6, resulting in a gradual suppression and a complete recovery of MIT in VO2. The migration of the oxygen ions is evidenced in a combination of transport measurement, structural characterization and first-principles calculations. This approach of chemically-induced oxygen migration using a water-dissolvable adjacent layer could be useful for advanced electronic and iontronic devices and studying oxygen stoichiometry effects on the MIT.en_US
dc.description.sponsorshipAgency for Science, Technology and Research (A*STAR)en_US
dc.description.sponsorshipMinistry of Education (MOE)en_US
dc.description.sponsorshipNational Research Foundation (NRF)en_US
dc.relationMOE2018-T3-1- 002en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.rights© 2021 Author(s). All rights reserved. This paper was published by AIP Publishing in Applied Physics Letters and is made available with permission of Author(s).en_US
dc.subjectEngineering::Electrical and electronic engineeringen_US
dc.titleReversible modulation of metal-insulator transition in VO₂ via chemically-induced oxygen migrationen_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.contributor.departmentDivision of Physics and Applied Physicsen_US
dc.description.versionPublished versionen_US
dc.subject.keywordsAluminum Compoundsen_US
dc.description.acknowledgementX.R.W. acknowledges support from the Tier 2 (Grant No. MOE-T2EP50120-0006) and Tier 3 (Grant No. MOE2018-T3-1- 002) from Singapore Ministry of Education, the Singapore National Research Foundation (NRF) under the competitive Research Programs (CRP Grant No. NRF-CRP21-2018-0003), and the Agency for Science, Technology and Research (A STAR) under its AME IRG grant (Project No. A20E5c0094). L.W. acknowledges support from Foshan (Southern China) Institute for New Materials (No. 2021AYF25014). X.R.W. thanks Ke Huang, Ariando, and T. Venky Ventakesan for their help. Z.H. acknowledges the support from the National Natural Science Foundation of China (Grant No. 12074001). X.L. acknowledges support from the National Natural Science Foundation of China (Grant No. 11904173) and the Jiangsu Specially Appointed Professor. D.-C.Q. acknowledges the support of the Australian Research Council (Grant No. FT160100207).en_US
item.fulltextWith Fulltext-
Appears in Collections:EEE Journal Articles
SPMS Journal Articles
Files in This Item:
File Description SizeFormat 
Reversible modulation of metal–insulator transition in VO2 via chemically induced oxygenmigration - 5.0058989.pdf
  Until 2022-10-04
14.41 MBAdobe PDFUnder embargo until Oct 04, 2022

Page view(s)

Updated on May 20, 2022

Google ScholarTM




Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.