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Title: Reversible modulation of metal-insulator transition in VO₂ via chemically-induced oxygen migration
Authors: Han, Kun
Wang, Hanyu
Wu, Liang
Cao, Yu
Qi, Dong-Chen
Li, Changjian
Huang, Zhen
Li, Xiao
Wang, Renshaw Xiao
Keywords: Science::Physics
Engineering::Electrical and electronic engineering
Issue Date: 2021
Source: Han, K., Wang, H., Wu, L., Cao, Y., Qi, D., Li, C., Huang, Z., Li, X. & Wang, R. X. (2021). Reversible modulation of metal-insulator transition in VO₂ via chemically-induced oxygen migration. Applied Physics Letters, 119(13), 133102-.
Project: MOE-T2EP50120-0006
MOE2018-T3-1- 002
Journal: Applied Physics Letters
Abstract: Metal-insulator transitions (MIT),an intriguing correlated phenomenon induced by the subtle competition of the electrons' repulsive Coulomb interaction and kinetic energy, is of great potential use for electronic applications due to the dramatic change in resistivity. Here, we demonstrate a reversible control of MIT in VO2 films via oxygen stoichiometry engineering. By facilely depositing and dissolving a water-soluble yet oxygen-active Sr3Al2O6 capping layer atop the VO2 at room temperature, oxygen ions can reversibly migrate between VO2 and Sr3Al2O6, resulting in a gradual suppression and a complete recovery of MIT in VO2. The migration of the oxygen ions is evidenced in a combination of transport measurement, structural characterization and first-principles calculations. This approach of chemically-induced oxygen migration using a water-dissolvable adjacent layer could be useful for advanced electronic and iontronic devices and studying oxygen stoichiometry effects on the MIT.
ISSN: 0003-6951
DOI: 10.1063/5.0058989
Rights: © 2021 Author(s). All rights reserved. This paper was published by AIP Publishing in Applied Physics Letters and is made available with permission of Author(s).
Fulltext Permission: embargo_20221004
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles
SPMS Journal Articles

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