Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/153569
Title: Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures
Authors: Lingaparthi, R.
Dharmarasu, Nethaji
Radhakrishnan, K.
Ranjan, A.
Seah, Alex Tian Long
Huo, Lili
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2021
Source: Lingaparthi, R., Dharmarasu, N., Radhakrishnan, K., Ranjan, A., Seah, A. T. L. & Huo, L. (2021). Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures. Applied Physics Letters, 118(12), 122105-. https://dx.doi.org/10.1063/5.0045910
Project: NRF2017-NRF-ANR003 GaNGUN 
Journal: Applied Physics Letters 
Abstract: Unintentionally doped (UID) AlGaN/GaN-based multichannel high electron mobility transistor (MC-HEMT) heterostructures have been demonstrated on the SiC substrate using plasma-assisted molecular beam epitaxy. The MC-HEMT heterostructure with a GaN channel thickness of 100 nm resulted in a cumulative two-dimensional electron gas (2DEG) concentration of 4.3 × 1013 cm-2 across six GaN channels. The sample showed sheet resistances of 170 ω/sq. and 101 ω/sq. at room temperature and 90 K, respectively. The source of 2DEG in the buried GaN channels of the heterostructure was investigated. The C-V measurements conducted on UID MC-HEMTs excluded the possibility of the valence band being the source of 2DEG and the consequent formation of two-dimensional hole gas at the buried GaN-channel/AlGaN-barrier interfaces. A comparison of the experimentally obtained 2DEG concentration with the simulated data suggests the presence of donor-like trap states, situated at 0.6 to 0.8 eV above the valence band at the buried GaN-channel/AlGaN-barrier interfaces, which act as the source of 2DEG in UID MC-HEMT heterostructures.
URI: https://hdl.handle.net/10356/153569
ISSN: 0003-6951
DOI: 10.1063/5.0045910
Rights: © 2021 Author(s). All rights reserved. This paper was published by AIP Publishing in Applied Physics Letters and is made available with permission of Author(s).
Fulltext Permission: embargo_20220331
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles
TL Journal Articles

Files in This Item:
File Description SizeFormat 
Source of two-dimensional electron gas in unintentionally doped AlGaN_GaN multichannel high-electron-mobility transistor heterostructures - 5.0045910.pdf
  Until 2022-03-31
9.31 MBAdobe PDFUnder embargo until Mar 31, 2022

Page view(s)

48
Updated on Jan 22, 2022

Google ScholarTM

Check

Altmetric


Plumx

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.