Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/153649
Title: Modulation of light absorption in flexible GeSn metal–semiconductor–metal photodetectors by mechanical bending
Authors: An, Shu
Wu, Shaoteng
Tan, Chuan Seng
Chang, Guo-En
Gong, Xiao
Kim, Munho
Keywords: Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Issue Date: 2020
Source: An, S., Wu, S., Tan, C. S., Chang, G., Gong, X. & Kim, M. (2020). Modulation of light absorption in flexible GeSn metal–semiconductor–metal photodetectors by mechanical bending. Journal of Materials Chemistry C, 8(39), 13557-13562. https://dx.doi.org/10.1039/D0TC03016C
Project: M4082289.040
NRF-CRP19-2017-01
MOE2018-T2-1-137
Journal: Journal of Materials Chemistry C
Abstract: We have demonstrated flexible GeSn metal–semiconductor–metal (MSM) photodetectors (PDs) by exploring the effect of mechanical strain on their optoelectronic properties. The PDs were fabricated from transfer-printed GeSn nanomembranes on polyethylene terephthalate (PET) substrates. Strain was introduced into the GeSn PDs under bend-down (uniaxial tensile strain) and bend-up (uniaxial compressive strain) conditions and their values were measured by Raman spectroscopy. The applied strain can affect the band-structure of the GeSn alloys, leading to a modulation of the electrical and optical characteristics of the PDs. Accordingly, dark current characteristics show an increase from 8.1 to 10.3 μA under the bend-down conditions and a decrease to 7.2 μA under the bend-up conditions, respectively. The optical responsivity at a wavelength of 2 μm increased by 151% under bend-down conditions, while it decreases by 35% under bend-up conditions. A theoretical study was carried out to support the fact that the responsivity enhancement is attributed to the change in the absorption coefficient of the strained GeSn. The results offer a new pathway to modulate the optical properties of GeSn for flexible applications.
URI: https://hdl.handle.net/10356/153649
ISSN: 2050-7526
DOI: 10.1039/D0TC03016C
Rights: © 2020 The Royal Society of Chemistry. All rights reserved. This paper was published in Journal of Materials Chemistry C and is made available with permission of The Royal Society of Chemistry.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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