Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/153649
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dc.contributor.authorAn, Shuen_US
dc.contributor.authorWu, Shaotengen_US
dc.contributor.authorTan, Chuan Sengen_US
dc.contributor.authorChang, Guo-Enen_US
dc.contributor.authorGong, Xiaoen_US
dc.contributor.authorKim, Munhoen_US
dc.date.accessioned2021-12-12T07:28:51Z-
dc.date.available2021-12-12T07:28:51Z-
dc.date.issued2020-
dc.identifier.citationAn, S., Wu, S., Tan, C. S., Chang, G., Gong, X. & Kim, M. (2020). Modulation of light absorption in flexible GeSn metal–semiconductor–metal photodetectors by mechanical bending. Journal of Materials Chemistry C, 8(39), 13557-13562. https://dx.doi.org/10.1039/D0TC03016Cen_US
dc.identifier.issn2050-7526en_US
dc.identifier.urihttps://hdl.handle.net/10356/153649-
dc.description.abstractWe have demonstrated flexible GeSn metal–semiconductor–metal (MSM) photodetectors (PDs) by exploring the effect of mechanical strain on their optoelectronic properties. The PDs were fabricated from transfer-printed GeSn nanomembranes on polyethylene terephthalate (PET) substrates. Strain was introduced into the GeSn PDs under bend-down (uniaxial tensile strain) and bend-up (uniaxial compressive strain) conditions and their values were measured by Raman spectroscopy. The applied strain can affect the band-structure of the GeSn alloys, leading to a modulation of the electrical and optical characteristics of the PDs. Accordingly, dark current characteristics show an increase from 8.1 to 10.3 μA under the bend-down conditions and a decrease to 7.2 μA under the bend-up conditions, respectively. The optical responsivity at a wavelength of 2 μm increased by 151% under bend-down conditions, while it decreases by 35% under bend-up conditions. A theoretical study was carried out to support the fact that the responsivity enhancement is attributed to the change in the absorption coefficient of the strained GeSn. The results offer a new pathway to modulate the optical properties of GeSn for flexible applications.en_US
dc.description.sponsorshipMinistry of Education (MOE)en_US
dc.description.sponsorshipNanyang Technological Universityen_US
dc.description.sponsorshipNational Research Foundation (NRF)en_US
dc.language.isoenen_US
dc.relationM4082289.040en_US
dc.relationNRF-CRP19-2017-01en_US
dc.relationMOE2018-T2-1-137en_US
dc.relation.ispartofJournal of Materials Chemistry Cen_US
dc.rights© 2020 The Royal Society of Chemistry. All rights reserved. This paper was published in Journal of Materials Chemistry C and is made available with permission of The Royal Society of Chemistry.en_US
dc.subjectEngineering::Electrical and electronic engineering::Optics, optoelectronics, photonicsen_US
dc.titleModulation of light absorption in flexible GeSn metal–semiconductor–metal photodetectors by mechanical bendingen_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doi10.1039/D0TC03016C-
dc.description.versionAccepted versionen_US
dc.identifier.issue39en_US
dc.identifier.volume8en_US
dc.identifier.spage13557en_US
dc.identifier.epage13562en_US
dc.subject.keywordsDark Currentsen_US
dc.subject.keywordsLight Absorptionen_US
dc.description.acknowledgementThe work was supported by the Nanyang Technological University (NTU) start-up grant (M4082289.040) and partly by the National Research Foundation, Singapore, under its Competitive Research Program (CRP Award NRF-CRP19-2017-01) and Ministry of Education, Singapore, under its Tier 2 (MOE2018-T2-1-137). The authors would like to thank Prof. Hong Wang at the NTU for providing a laser setup.en_US
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