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Title: Strain-free GeSn nanomembranes enabled by transfer-printing techniques for advanced optoelectronic applications
Authors: Tai, Yeh-Chen
Yeh, Po-Lun
An, Shu
Cheng, Hung-Hsiang
Kim, Munho
Chang, Guo-En
Keywords: Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2020
Source: Tai, Y., Yeh, P., An, S., Cheng, H., Kim, M. & Chang, G. (2020). Strain-free GeSn nanomembranes enabled by transfer-printing techniques for advanced optoelectronic applications. Nanotechnology, 31(44), 445301-.
Project: M4082289.040
Journal: Nanotechnology
Abstract: GeSn alloys have emerged as promising materials for silicon-based optoelectronic devices. However, the epitaxy of pseudomorphic GeSn layers on a Ge buffer is susceptible to a significant compressive strain that significantly hinders the performance of GeSn-based photonic devices. Herein, we report on a new strategy to produce strain-free GeSn nanomembranes for advanced optoelectronic applications. The GeSn alloy was grown on a silicon-on-insulator substrate using Ge buffers, and it has a residual compressive strain. By transfer-printing the GeSn/Ge/Si multi-layers, followed by etching the Si template and the Ge buffer layers, respectively, the residual compressive strain was completely removed to achieve strain-free GeSn layers. A bandgap reduction was also observed as a result of strain relaxation. Furthermore, theoretical analysis was performed to evaluate the effect of strain relaxation on the GeSn-based optoelectronic devices. The proposed approach offers a practical and viable method for preparing strain-free GeSn alloys for advanced optoelectronic applications.
ISSN: 0957-4484
DOI: 10.1088/1361-6528/aba6b1
Rights: © 2020 IOP Publishing Ltd. All rights reserved. This is an author-created, un-copyedited version of an article accepted for publication in Nanotechnology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The definitive publisher authenticated version is available online at
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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