Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/154057
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dc.contributor.authorLi, Yuanboen_US
dc.contributor.authorSun, Jianxunen_US
dc.contributor.authorSalim, Teddyen_US
dc.contributor.authorLiu, Rongyueen_US
dc.contributor.authorChen, Tupeien_US
dc.date.accessioned2022-02-14T06:34:33Z-
dc.date.available2022-02-14T06:34:33Z-
dc.date.issued2021-
dc.identifier.citationLi, Y., Sun, J., Salim, T., Liu, R. & Chen, T. (2021). Performance enhancement of transparent amorphous IGZO thin-film transistor realized by sputtered amorphous AlOx passivation layer. ECS Journal of Solid State Science and Technology, 10(4), 045006-. https://dx.doi.org/10.1149/2162-8777/abf724en_US
dc.identifier.issn2162-8769en_US
dc.identifier.urihttps://hdl.handle.net/10356/154057-
dc.description.abstractWe report a high-mobility transparent Indium-Gallium-Zinc-Oxide (IGZO) thin-film transistor (TFT) with sputtered AlOx passivation layer. The interfacial region between the IGZO layer and the AlOx layer played a crucial role in improving the field-effect mobility (the maximum field-effect mobility increased from 6.292 cm2 Vs-1 for the TFT without the AlOx layer to 69.01 cm2 Vs-1 for the TFT with the passivation layer) and the on/off current ratio (from ∼107 without the layer to ∼108 with the layer). The driving current of IGZO TFT was also significantly enhanced. The formation of the interfacial layer has been investigated and verified. The ion bombardment during the AlOx deposition broke the In-O bond in IGZO, generating oxygen ions (O2-). The segregation of the O2- was facilitated by the sputtered amorphous AlOx. A metallic In-rich layer with high oxygen vacancy concentration was formed at the interface, leading to an increase in the carrier concentration in the interfacial layer. Besides the electrical performance, the reliability tests, including long-term exposure in the ambient environment and positive bias illumination stress (PBIS), showed improved results as well.en_US
dc.description.sponsorshipMinistry of Education (MOE)en_US
dc.description.sponsorshipNational Research Foundation (NRF)en_US
dc.language.isoenen_US
dc.relationNRFCRP13-2014-02en_US
dc.relationMOE Tier 1 Grant No. RG144/ 20en_US
dc.relation.ispartofECS Journal of Solid State Science and Technologyen_US
dc.rights© The Electrochemical Society, Inc. 2021. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in ECS Journal of Solid State Science and Technology, 10, 4, 045006.en_US
dc.subjectEngineering::Electrical and electronic engineeringen_US
dc.subjectEngineering::Materialsen_US
dc.titlePerformance enhancement of transparent amorphous IGZO thin-film transistor realized by sputtered amorphous AlOx passivation layeren_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.identifier.doi10.1149/2162-8777/abf724-
dc.description.versionPublished versionen_US
dc.identifier.scopus2-s2.0-85104804740-
dc.identifier.issue4en_US
dc.identifier.volume10en_US
dc.identifier.spage045006en_US
dc.subject.keywordsAluminum Compoundsen_US
dc.subject.keywordsCarrier Concentrationen_US
dc.description.acknowledgementThis work was supported by the National Research Foundation of Singapore (Program Grant No. NRFCRP13-2014-02) and Ministry of Education (MOE) of Singapore (MOE Tier 1 Grant No. RG144/ 20). We also would like to acknowledge the Facility for Analysis, Characterization, Testing and Simulation, Nanyang Technological University, Singapore, for use of their electron microscopy/X-ray facilities.en_US
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