Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/154057
Title: Performance enhancement of transparent amorphous IGZO thin-film transistor realized by sputtered amorphous AlOx passivation layer
Authors: Li, Yuanbo
Sun, Jianxun
Salim, Teddy
Liu, Rongyue
Chen, Tupei
Keywords: Engineering::Electrical and electronic engineering
Engineering::Materials
Issue Date: 2021
Source: Li, Y., Sun, J., Salim, T., Liu, R. & Chen, T. (2021). Performance enhancement of transparent amorphous IGZO thin-film transistor realized by sputtered amorphous AlOx passivation layer. ECS Journal of Solid State Science and Technology, 10(4), 045006-. https://dx.doi.org/10.1149/2162-8777/abf724
Project: NRFCRP13-2014-02
MOE Tier 1 Grant No. RG144/ 20
Journal: ECS Journal of Solid State Science and Technology
Abstract: We report a high-mobility transparent Indium-Gallium-Zinc-Oxide (IGZO) thin-film transistor (TFT) with sputtered AlOx passivation layer. The interfacial region between the IGZO layer and the AlOx layer played a crucial role in improving the field-effect mobility (the maximum field-effect mobility increased from 6.292 cm2 Vs-1 for the TFT without the AlOx layer to 69.01 cm2 Vs-1 for the TFT with the passivation layer) and the on/off current ratio (from ∼107 without the layer to ∼108 with the layer). The driving current of IGZO TFT was also significantly enhanced. The formation of the interfacial layer has been investigated and verified. The ion bombardment during the AlOx deposition broke the In-O bond in IGZO, generating oxygen ions (O2-). The segregation of the O2- was facilitated by the sputtered amorphous AlOx. A metallic In-rich layer with high oxygen vacancy concentration was formed at the interface, leading to an increase in the carrier concentration in the interfacial layer. Besides the electrical performance, the reliability tests, including long-term exposure in the ambient environment and positive bias illumination stress (PBIS), showed improved results as well.
URI: https://hdl.handle.net/10356/154057
ISSN: 2162-8769
DOI: 10.1149/2162-8777/abf724
Rights: © The Electrochemical Society, Inc. 2021. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in ECS Journal of Solid State Science and Technology, 10, 4, 045006.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles
MSE Journal Articles

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