Please use this identifier to cite or link to this item:
Title: Evaluation of substrate bias effect on Ta-Ni thin film as Cu diffusion barrier
Authors: Jiang, Yueyue
Keywords: DRNTU::Engineering
Issue Date: 2009
Abstract: This work examines the thin film properties and diffusion barrier performance of magnetron-sputtered Ta-Ni films. The thin films were deposited on Si substrate with varying RF substrate bias, aiming at depositing highly thermally stable amorphous and conductive diffusion barriers for copper metallization in the integrated circuits. Five different substrate bias powers were utilized and the effects on the film properties were evaluated. Structural analysis indicated that all the as-deposited Ta-Ni films indeed had an amorphous structure and were free from highly resistive intermetallic compounds. Thermal stability test was conducted through thermal vacuum annealing at different elevated temperatures, and it was found that all the films in Si/SiO2/Ta-Ni system were stable up to 700oC; while examining Si/SiO2/Ta-Ni/Cu stack films revealed that only the film with 100W substrate bias applied remained its glassy structure up to 700oC. Four-point probes measurements were also conducted to measure the sheet resistance of the films and a lowest resistivity of 211.48 µΩ.cm could be achieved. Increasing the substrate bias decreased the oxygen incorporation, thus reduced the film resistivity, and enhanced the microstructural and thermal stability of the stacked films, markedly improving the barrier performance.
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:MSE Student Reports (FYP/IA/PA/PI)

Files in This Item:
File Description SizeFormat 
  Restricted Access
824.78 kBAdobe PDFView/Open

Page view(s) 20

checked on Oct 29, 2020

Download(s) 20

checked on Oct 29, 2020

Google ScholarTM


Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.