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Title: Highly robust organometallic small-molecule-based nonvolatile resistive memory controlled by a redox-gated switching mechanism
Authors: Li, Yang
Zhu, Xiaolin
Li, Yujia
Zhang, Mayue
Ma, Chunlan
Li, Hua
Lu, Jianmei
Zhang, Qichun
Keywords: Engineering::Materials
Issue Date: 2019
Source: Li, Y., Zhu, X., Li, Y., Zhang, M., Ma, C., Li, H., Lu, J. & Zhang, Q. (2019). Highly robust organometallic small-molecule-based nonvolatile resistive memory controlled by a redox-gated switching mechanism. ACS Applied Materials and Interfaces, 11(43), 40332-40338.
Project: RG 111/17
RG 2/17
RG 114/16
RG 113/18
21336005 and 21878199
Journal: ACS Applied Materials and Interfaces
Abstract: Although organic small-molecule-based memory devices (OSMDs) have been demonstrated to show great potential for the application in next-generation data-storage technology, progress toward their further development has been hugely hindered by the ambiguity of their electrical switching mechanism. Thus, purposely fabricating OSMDs with a definite switching behavior is very urgent. Here, we reported a redox-gated nonvolatile rewritable memory device using an organometallic small molecule as an active material. By introducing the redox-active ferrocene into an organic skeleton, the target small molecule exhibits reliable and robust FLASH-type bistable electrical characteristics with a clear redox-controlled switching mechanism, which leads to low operational voltages, good endurance, and long retention. Our study offers a proof-of-concept strategy to design controllable OSMDs with excellent performances.
ISSN: 1944-8244
DOI: 10.1021/acsami.9b13401
Rights: This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials and Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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