Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/154331
Title: Unusually-high growth rate (∼2.8 μm/s) of germania nanowires and its hierarchical structures by an in-situ continuous precursor supply
Authors: Wu, Shaoteng
Chen, Qimiao
Zhang, Lin
Dian, Lim Yu
Zhou, Hao
Tan, Chuan Seng
Keywords: Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2021
Source: Wu, S., Chen, Q., Zhang, L., Dian, L. Y., Zhou, H. & Tan, C. S. (2021). Unusually-high growth rate (∼2.8 μm/s) of germania nanowires and its hierarchical structures by an in-situ continuous precursor supply. Ceramics International. https://dx.doi.org/10.1016/j.ceramint.2021.11.245
Project: NRF–CRP19–2017–01
2019-T1-002-040 (RG147/19)
Journal: Ceramics International
Abstract: Low-dimensional nanostructured semiconductors are becoming the promising materials for the further high-performance nanophotonics, nanoelectronics, and quantum devices. To enable these applications, it requires an efficient methodology to control the dimension of the materials during synthesis processes and to achieve mass production of these materials with reproducibility, perfect crystallinity, and low cost. In this study, an ultra-fast, facile synthesis strategy is presented for reproducible monocrystalline hexagonal germania (GeO2) nanowires (NWs) and hierarchical structures. These GeO2 nanostructures were grown in one step by annealing of the Ni- film-covered GeSn epilayers in a rapid thermal annealing system without any gaseous or liquid Ge sources. It was found that after short annealing for 60 s at 675 °C, the longest GeO2 NWs were more than 170 µm, indicating that the growth rate is several magnitude orders higher than that of the common chemical vapor deposition (CVD) methods. The mechanism of the growth was studied by changing the growth temperature, catalyst type, and surface oxidation. The results indicate that this record-fast growth (>2.8 um/s) of NW is due to the continuously generated in-situ GeO vapors from the Ni-catalyst decomposition of supersaturated GeSn epilayer. This work presents a high-efficiency, low-cost, and wafer-scale method to synthesis high-density GeO2 NW and its hierarchical structures which have the potential applications for optoelectronic communication/detection, superhydrophobic surfaces, photocatalyst, and sensing.
URI: https://hdl.handle.net/10356/154331
ISSN: 0272-8842
DOI: 10.1016/j.ceramint.2021.11.245
Rights: © 2021 Elsevier Ltd. All rights reserved. This paper was published in Ceramics International and is made available with permission of Elsevier Ltd.
Fulltext Permission: embargo_20231216
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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