Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/154381
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dc.contributor.authorLingaparthi, R.en_US
dc.contributor.authorDharmarasu, Nethajien_US
dc.contributor.authorRadhakrishnan, K.en_US
dc.contributor.authorAgrawal, Manvien_US
dc.date.accessioned2021-12-20T03:24:09Z-
dc.date.available2021-12-20T03:24:09Z-
dc.date.issued2020-
dc.identifier.citationLingaparthi, R., Dharmarasu, N., Radhakrishnan, K. & Agrawal, M. (2020). In-situ stress evolution and its correlation with structural characteristics of GaN buffer grown on Si substrate using AlGaN/AlN/GaN stress mitigation layers for high electron mobility transistor applications. Thin Solid Films, 708, 138128-. https://dx.doi.org/10.1016/j.tsf.2020.138128en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttps://hdl.handle.net/10356/154381-
dc.description.abstractIn-situ stress evolution as a function of thickness has been investigated and correlated with the structural properties and surface morphology of GaN buffer layer grown on AlGaN/AlN/GaN stress mitigating layers (SMLs). For comparison, GaN buffer was also grown on AlN/GaN SMLs. AlGaN/AlN/GaN SMLs exhibited efficient stress mitigation characteristics resulting in higher compressive mean stress during the growth and convex bow at the end of the growth. Horizontal screw-type misfit dislocations generated at the GaN/AlGaN and AlGaN/AlN interfaces were attributed to the stress mitigation property. The residual compressive stress in the GaN buffer was found to be lower with the AlGaN/AlN/GaN SMLs, which resulted in rough surface morphology. Increased V/III ratio used for GaN buffer growth was found to result in reduced stress relaxation at the interface leading to higher residual compressive stress and enhanced diffusion of ad-atoms. This consequently reduced the kinetic roughening and improved surface morphology. Thus, stress engineering by using AlGaN/AlN/GaN SMLs and by changing of the V/III ratio of GaN buffer, the mean stress of heterostructure was controlled and relatively smoother surface morphology was achieved, respectively. Reasonably good uniformity in electrical characteristics with a standard deviation of 7%, 1% and 8% for the sheet resistance, carrier concentration and mobility, respectively, were achieved for GaN high-electron-mobility transistor heterostructures across the 100 mm substrate.en_US
dc.description.sponsorshipMinistry of Education (MOE)en_US
dc.language.isoenen_US
dc.relationMOE 2017-T1-001-200en_US
dc.relation.ispartofThin Solid Filmsen_US
dc.rights© 2020 Elsevier B.V. All rights reserved.en_US
dc.subjectEngineering::Electrical and electronic engineeringen_US
dc.titleIn-situ stress evolution and its correlation with structural characteristics of GaN buffer grown on Si substrate using AlGaN/AlN/GaN stress mitigation layers for high electron mobility transistor applicationsen_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.contributor.researchCentre for Micro-/Nano-electronics (NOVITAS)en_US
dc.contributor.researchTemasek Laboratories @ NTUen_US
dc.identifier.doi10.1016/j.tsf.2020.138128-
dc.identifier.scopus2-s2.0-85085270121-
dc.identifier.volume708en_US
dc.identifier.spage138128en_US
dc.subject.keywordsAmmoniaen_US
dc.subject.keywordsMolecular Beam Epitaxyen_US
dc.description.acknowledgementThis work was supported by the funding support from the Ministry of Education, Singapore, Singapore (MOE 2017-T1-001-200).en_US
item.fulltextNo Fulltext-
item.grantfulltextnone-
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