Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/154419
Title: In situ growth of [hk1]-oriented Sb2S3 for solution-processed planar heterojunction solar cell with 6.4% efficiency
Authors: Jin, Xin
Fang, Yanan
Salim, Teddy
Feng, Minjun
Hadke, Shreyash
Leow, Shin Woei
Sum, Tze Chien
Wong, Lydia Helena
Keywords: Engineering::Materials
Issue Date: 2020
Source: Jin, X., Fang, Y., Salim, T., Feng, M., Hadke, S., Leow, S. W., Sum, T. C. & Wong, L. H. (2020). In situ growth of [hk1]-oriented Sb2S3 for solution-processed planar heterojunction solar cell with 6.4% efficiency. Advanced Functional Materials, 30(35), 2002887-. https://dx.doi.org/10.1002/adfm.202002887
Project: MOE2016-T2-1-030
M4080514
Journal: Advanced Functional Materials
Abstract: Binary compound antimony sulfide (Sb2S3) with its nontoxic and earth-abundant constituents, is a promising light-harvesting material for stable and high efficiency thin film photovoltaics. The intrinsic quasi-1D (Q1D) crystal structure of Sb2S3 is known to transfer photogenerated carriers rapidly along the [hk1] orientation. However, producing Sb2S3 devices with precise control of [hk1] orientation is challenging and unfavorable crystal orientations of Sb2S3 result in severe interface and bulk recombination losses. Herein, in situ vertical growth of Sb2S3 on top of ultrathin TiO2/CdS as the electron transport layer (ETL) by a solution method is demonstrated. The planar heterojunction solar cell using [hk1]-oriented Sb2S3 achieves a power conversion efficiency of 6.4%, performing at almost 20% higher than devices based on a [hk0]-oriented absorber. This work opens up new prospects for pursuing high-performance Sb2S3 thin film solar cells by tailoring the crystal orientation.
URI: https://hdl.handle.net/10356/154419
ISSN: 1616-301X
DOI: 10.1002/adfm.202002887
Rights: © 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. All rights reserved.
Fulltext Permission: none
Fulltext Availability: No Fulltext
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