Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/154428
Title: Influences of structural modification of naphthalenediimides with benzothiazole on organic field-effect transistor and non-fullerene perovskite solar cell characteristics
Authors: Shaikh, Dada .
Ahmed Ali Said
Wang, Zongrui
Srinivasa Rao, Pedada
Bhosale, Rajesh S.
Mak, Adrian M.
Zhao, Kexiang
Zhou, Yu
Liu, Wenbo
Gao, Weibo
Xie, Jian
Bhosale, Sidhanath V.
Bhosale, Sheshanath V.
Zhang, Qichun
Keywords: Engineering::Materials
Issue Date: 2019
Source: Shaikh, D. .., Ahmed Ali Said, Wang, Z., Srinivasa Rao, P., Bhosale, R. S., Mak, A. M., Zhao, K., Zhou, Y., Liu, W., Gao, W., Xie, J., Bhosale, S. V., Bhosale, S. V. & Zhang, Q. (2019). Influences of structural modification of naphthalenediimides with benzothiazole on organic field-effect transistor and non-fullerene perovskite solar cell characteristics. ACS Applied Materials & Interfaces, 11(47), 44487-44500. https://dx.doi.org/10.1021/acsami.9b13894
Project: RG 111/17
RG 2/17
RG 114/16
RG 8/16
MOE 2017-T2-1-021
MOE 2018-T2-1-070
Journal: ACS Applied Materials & Interfaces 
Abstract: Developing air-stable high-performance small organic molecule-based n-type and ambipolar organic field-effect transistors (OFETs) is very important and highly desirable. In this investigation, we designed and synthesized two naphthalenediimide (NDI) derivatives (NDI-BTH1 and NDI-BTH2) and found that introduction of 2-(benzo[d]thiazol-2-yl) acetonitrile groups at the NDI core position gave the lowest unoccupied molecular orbital (LUMO; -4.326 eV) and displayed strong electron affinities, suggesting that NDI-BTH1 might be a promising electron-transporting material (i.e., n-type semiconductor), whereas NDI-BTH2 bearing bis(benzo[d]thiazol-2-yl)methane at the NDI core with a LUMO of -4.243 eV was demonstrated to be an ambipolar material. OFETs based on NDI-BTH1 and NDI-BTH2 have been fabricated, and the electron mobilities of NDI-BTH1 and NDI-BTH2 are 14.00 × 10-5 and 8.64 × 10-4 cm2/V·s, respectively, and the hole mobility of NDI-BTH2 is 1.68 × 10-4 cm2/V·s. Moreover, a difference in NDI-core substituent moieties significantly alters the UV-vis absorption and cyclic voltammetry properties. Thus, we further successfully employed NDI-BTH1 and NDI-BTH2 as electron transport layer (ETL) materials in inverted perovskite solar cells (PSCs). The PSC performance exhibits that NDI-BTH2 as the ETL material gave higher power conversion efficiency as compared to NDI-BTH1, that is, NDI-BTH2 produces 15.4%, while NDI-BTH1 gives 13.7%. The PSC performance is comparable with the results obtained from OFETs. We presume that improvement in solar cell efficiency of NDI-BTH2-based PSCs is due to the well-matched LUMO of NDI-BTH2 toward the conduction band of the perovskite layer, which in turn increase electron extraction and transportation.
URI: https://hdl.handle.net/10356/154428
ISSN: 1944-8244
DOI: 10.1021/acsami.9b13894
Rights: This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsami.9b13894.
Fulltext Permission: open
Fulltext Availability: With Fulltext
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