Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/154455
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dc.contributor.authorSuo, Feien_US
dc.contributor.authorTong, Jinchaoen_US
dc.contributor.authorZhang, Dao Huaen_US
dc.date.accessioned2021-12-23T00:44:59Z-
dc.date.available2021-12-23T00:44:59Z-
dc.date.issued2020-
dc.identifier.citationSuo, F., Tong, J. & Zhang, D. H. (2020). Dark current analysis of InasSb-based hetero-p-i-n mid-infrared photodiode. IEEE Journal of Quantum Electronics, 56(1), 1-6. https://dx.doi.org/10.1109/JQE.2019.2952388en_US
dc.identifier.issn0018-9197en_US
dc.identifier.urihttps://hdl.handle.net/10356/154455-
dc.description.abstractWe comprehensively study the characteristics of dark current for a p-i-n heterostructure photodiode. To reduce the dark current, a wide-bandgap layer (AlGaSb) and thin quaternary layers (AlInAsSb) are inserted in the heterostructure for blocking the dark carrier diffusion and limiting type-II transition at interface, respectively. The activation energy derived from measurement results indicates the positive (negative) correlation between the dominant dark current density and voltage bias (temperature). Whatever the voltage bias (temperature), this relationship always exists, indicating the high stability and reliability of our devices. Indeed, the measures taken for reducing dark current are confirmed to be effective as the dark current density for this photodiode is limited to a lower level. For the typical square mesa with 350 μm side length, at the bias of -0.4 V, the dark current density is 1.78 A/cm2 for T=293 K, and reduces to 0.4 A/cm2 for T=77 K, where the room-temperature value is lower than or comparable with that of the state-of-the-art mid-infrared photodetectors. A room-temperature detectivity of 8.3 × 108 cm · Hz1/2/W with a cut-off wavelength of 4 μm is demonstrated.en_US
dc.description.sponsorshipAgency for Science, Technology and Research (A*STAR)en_US
dc.description.sponsorshipMinistry of Education (MOE)en_US
dc.language.isoenen_US
dc.relationSERC A1883c0002en_US
dc.relation1720700038en_US
dc.relation2017-T1-002-117en_US
dc.relationRG 177/17en_US
dc.relation.ispartofIEEE Journal of Quantum Electronicsen_US
dc.rights© 2019 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission.en_US
dc.subjectEngineering::Electrical and electronic engineeringen_US
dc.titleDark current analysis of InasSb-based hetero-p-i-n mid-infrared photodiodeen_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doi10.1109/JQE.2019.2952388-
dc.identifier.scopus2-s2.0-85077359809-
dc.identifier.issue1en_US
dc.identifier.volume56en_US
dc.identifier.spage1en_US
dc.identifier.epage6en_US
dc.subject.keywordsDark Currenten_US
dc.subject.keywordsHeterostructureen_US
dc.description.acknowledgementThis work was supported in part by the A∗ Star under Grant SERC A1883c0002 and Grant 1720700038, in part by the Ministry of Education, Singapore, under Grant 2017-T1-002-117 and Grant RG 177/17, and in part by the Asian Office of Aerospace Research and Development under Grant FA2386-17-1-0039. (Corresponding author: Jinchao Tong.)en_US
item.grantfulltextnone-
item.fulltextNo Fulltext-
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