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Title: Dark current analysis of InasSb-based hetero-p-i-n mid-infrared photodiode
Authors: Suo, Fei
Tong, Jinchao
Zhang, Dao Hua
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2020
Source: Suo, F., Tong, J. & Zhang, D. H. (2020). Dark current analysis of InasSb-based hetero-p-i-n mid-infrared photodiode. IEEE Journal of Quantum Electronics, 56(1), 1-6.
Project: SERC A1883c0002
RG 177/17
Journal: IEEE Journal of Quantum Electronics
Abstract: We comprehensively study the characteristics of dark current for a p-i-n heterostructure photodiode. To reduce the dark current, a wide-bandgap layer (AlGaSb) and thin quaternary layers (AlInAsSb) are inserted in the heterostructure for blocking the dark carrier diffusion and limiting type-II transition at interface, respectively. The activation energy derived from measurement results indicates the positive (negative) correlation between the dominant dark current density and voltage bias (temperature). Whatever the voltage bias (temperature), this relationship always exists, indicating the high stability and reliability of our devices. Indeed, the measures taken for reducing dark current are confirmed to be effective as the dark current density for this photodiode is limited to a lower level. For the typical square mesa with 350 μm side length, at the bias of -0.4 V, the dark current density is 1.78 A/cm2 for T=293 K, and reduces to 0.4 A/cm2 for T=77 K, where the room-temperature value is lower than or comparable with that of the state-of-the-art mid-infrared photodetectors. A room-temperature detectivity of 8.3 × 108 cm · Hz1/2/W with a cut-off wavelength of 4 μm is demonstrated.
ISSN: 0018-9197
DOI: 10.1109/JQE.2019.2952388
Rights: © 2019 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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