Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/154456
Title: GeSn/GaAs hetero-structure by magnetron sputtering
Authors: Qian, Li
Tong, Jinchao
Suo, Fei
Liu, Lin
Fan, Weijun
Luo, Yu
Zhang, Dao Hua
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2020
Source: Qian, L., Tong, J., Suo, F., Liu, L., Fan, W., Luo, Y. & Zhang, D. H. (2020). GeSn/GaAs hetero-structure by magnetron sputtering. IEEE Journal of Quantum Electronics, 56(2), 1-5. https://dx.doi.org/10.1109/JQE.2019.2963057
Project: SERC 1720700038
SERC A1883c0002
2017-T1-002-117(RG 177/17)
Journal: IEEE Journal of Quantum Electronics
Abstract: We report high quality GeSn/GaAs heterostructure photodetectors grown by a modified magnetron sputtering system. A metal-semiconductor-metal photoconductor is fabricated to examine the ability of photodetection for GeSn alloy. Then the GeSn/GaAs heterostructure photodetector is first demonstrated with a detectivity of.8\times 10^{9}$ Jones achieved at 1450 nm under an applied reverse voltage bias of -0.1 V, which is comparable to or even better than the GeSn-based photodetectors grown by chemical vapor deposition. The work provides an alternative technique for low cost and large-area fabrication of GeSn based devices.
URI: https://hdl.handle.net/10356/154456
ISSN: 0018-9197
DOI: 10.1109/JQE.2019.2963057
Rights: © 2019 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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