Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/154465
DC FieldValueLanguage
dc.contributor.authorKumar, Dayananden_US
dc.contributor.authorKalaga, Pranav Sairamen_US
dc.contributor.authorAng, Diing Shenpen_US
dc.date.accessioned2021-12-23T03:29:21Z-
dc.date.available2021-12-23T03:29:21Z-
dc.date.issued2020-
dc.identifier.citationKumar, D., Kalaga, P. S. & Ang, D. S. (2020). Visible light detection and memory capabilities in MgO/HfO bilayer-based transparent structure for photograph sensing. IEEE Transactions On Electron Devices, 67(10), 4274-4280. https://dx.doi.org/10.1109/TED.2020.3014271en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttps://hdl.handle.net/10356/154465-
dc.description.abstractPhotograph response in transparent devices has been a hot area of investigation, with several material systems being used to generate a response to illumination. In this study, we propose an ITO/MgO/HfO2/ITO bilayer (BL) transparent resistive switching (RS) device that exhibits a photograph response through defect engineering in the switching layer, which resulted in a subsurface active RS location in the formed conductive filament, thus reducing the loss of oxygen through the polycrystalline electrode. We observe that the switching performance is enhanced in the ITO/MgO/HfO2/ITO BL device as compared to the ITO/HfO2/ITO single-layer device with the insertion of MgO layer between the ITO top electrode and HfO2 RS layer. The device shows excellent ON/ OFF ratio (107), high and stable dc electrical set and optical reset endurance (>1000 cycles without degradation), excellent retention (>104 s at 85 °C), high transparency (>85% transmittance in the visible spectrum), and a response time of 30 $\mu \text{s}$ for the optical reset. This study lays the foundation for future work involving oxide defect-based optical functionalization in RS devices with the possibility for being used in photograph sensing.en_US
dc.language.isoenen_US
dc.relationMOE2016-T2-1-102en_US
dc.relationMOE2016-T2-2-102en_US
dc.relation.ispartofIEEE Transactions on Electron Devicesen_US
dc.rights© 2020 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission.en_US
dc.subjectEngineering::Electrical and electronic engineeringen_US
dc.titleVisible light detection and memory capabilities in MgO/HfO bilayer-based transparent structure for photograph sensingen_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doi10.1109/TED.2020.3014271-
dc.identifier.scopus2-s2.0-85092081554-
dc.identifier.issue10en_US
dc.identifier.volume67en_US
dc.identifier.spage4274en_US
dc.identifier.epage4280en_US
dc.subject.keywordsConductive Filamenten_US
dc.subject.keywordsElectrical SETen_US
dc.description.acknowledgementThis work was supported by the Singapore Ministry of Education under Grant MOE2016-T2-1-102 and Grant MOE2016-T2- 2-102.en_US
item.grantfulltextnone-
item.fulltextNo Fulltext-
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