Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/154465
Title: Visible light detection and memory capabilities in MgO/HfO bilayer-based transparent structure for photograph sensing
Authors: Kumar, Dayanand
Kalaga, Pranav Sairam
Ang, Diing Shenp
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2020
Source: Kumar, D., Kalaga, P. S. & Ang, D. S. (2020). Visible light detection and memory capabilities in MgO/HfO bilayer-based transparent structure for photograph sensing. IEEE Transactions On Electron Devices, 67(10), 4274-4280. https://dx.doi.org/10.1109/TED.2020.3014271
Project: MOE2016-T2-1-102
MOE2016-T2-2-102
Journal: IEEE Transactions on Electron Devices
Abstract: Photograph response in transparent devices has been a hot area of investigation, with several material systems being used to generate a response to illumination. In this study, we propose an ITO/MgO/HfO2/ITO bilayer (BL) transparent resistive switching (RS) device that exhibits a photograph response through defect engineering in the switching layer, which resulted in a subsurface active RS location in the formed conductive filament, thus reducing the loss of oxygen through the polycrystalline electrode. We observe that the switching performance is enhanced in the ITO/MgO/HfO2/ITO BL device as compared to the ITO/HfO2/ITO single-layer device with the insertion of MgO layer between the ITO top electrode and HfO2 RS layer. The device shows excellent ON/ OFF ratio (107), high and stable dc electrical set and optical reset endurance (>1000 cycles without degradation), excellent retention (>104 s at 85 °C), high transparency (>85% transmittance in the visible spectrum), and a response time of 30 $\mu \text{s}$ for the optical reset. This study lays the foundation for future work involving oxide defect-based optical functionalization in RS devices with the possibility for being used in photograph sensing.
URI: https://hdl.handle.net/10356/154465
ISSN: 0018-9383
DOI: 10.1109/TED.2020.3014271
Rights: © 2020 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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