Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/154466
Title: Investigation of electrical noise signal triggered resistive switching and its implications
Authors: Sun, Jianxun
Tan, Juan Boon
Chen, Tupei
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2020
Source: Sun, J., Tan, J. B. & Chen, T. (2020). Investigation of electrical noise signal triggered resistive switching and its implications. IEEE Transactions On Electron Devices, 67(10), 4178-4184. https://dx.doi.org/10.1109/TED.2020.3014841
Project: NRF-CRP13-2014-02
I1801E0030
RCA16/335
Journal: IEEE Transactions on Electron Devices
Abstract: In this article, the electrical noise signal triggered switching of resistive random access memory (RRAM) device is investigated. As noise is also generated when powering up the light source, such a phenomenon can be easily mistaken as a light-activated event. Thus, it is necessary to conduct a 'dark test' on the light-related experimental work to make a correct judgment of the observation. Although noise is often undesirable, we show that the voltage amplitude of the noise signal which triggers the forming process is much lower than the unipolar pulse height owing to the facilitation effect of the negative voltage. As a result, we propose a novel bipolar pulse writing scheme to reduce the forming voltage and variability. Conversely, the reverse effect is demonstrated for the set process, as the role of the negative voltage changes with the state of the device. This study provides a guideline for the design and optimization of the operation signals of the RRAM devices.
URI: https://hdl.handle.net/10356/154466
ISSN: 0018-9383
DOI: 10.1109/TED.2020.3014841
Rights: © 2020 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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