Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/154561
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dc.contributor.authorThambidurai, Muthuvelanen_US
dc.contributor.authorFoo, Shinien_US
dc.contributor.authorKim, Jun Youngen_US
dc.contributor.authorLee, Changheeen_US
dc.contributor.authorDang, Cuongen_US
dc.date.accessioned2021-12-28T06:33:28Z-
dc.date.available2021-12-28T06:33:28Z-
dc.date.issued2020-
dc.identifier.citationThambidurai, M., Foo, S., Kim, J. Y., Lee, C. & Dang, C. (2020). Solution-processed Ga-TiO₂ electron transport layer for efficient inverted organic solar cells. Materials Letters, 274, 128003-. https://dx.doi.org/10.1016/j.matlet.2020.128003en_US
dc.identifier.issn0167-577Xen_US
dc.identifier.urihttps://hdl.handle.net/10356/154561-
dc.description.abstractTo boost the charge transport and collection processes in inverted organic solar device, gallium (Ga) was added to conventional TiO₂ film to form the Ga-TiO₂ film. Compared to the pristine film, the Ga-TiO₂ film showed better energy level alignment, which is in good agreement with the heightened open-circuit voltage and fill factor. Attributed to the superior electron transport, the Ga-TiO₂ based solar cell achieved paramount power conversion efficiency (PCE) of 7.72%, while the pristine TiO₂ based solar cell showed lower PCE of 6.65%.en_US
dc.description.sponsorshipMinistry of Education (MOE)en_US
dc.language.isoenen_US
dc.relationMOE2019-T1-002-087en_US
dc.relation.ispartofMaterials Lettersen_US
dc.rights© 2020 Elsevier B.V. All rights reserved.en_US
dc.subjectEngineering::Electrical and electronic engineeringen_US
dc.titleSolution-processed Ga-TiO₂ electron transport layer for efficient inverted organic solar cellsen_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.identifier.doi10.1016/j.matlet.2020.128003-
dc.identifier.scopus2-s2.0-85085201590-
dc.identifier.volume274en_US
dc.identifier.spage128003en_US
dc.subject.keywordsElectron Transport Layeren_US
dc.subject.keywordsGa-Doped TiO₂en_US
dc.description.acknowledgementThe research is supported by AcRF Tier1 grant (MOE2019-T1- 002-087) from Singapore Ministry of Education.en_US
item.grantfulltextnone-
item.fulltextNo Fulltext-
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