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https://hdl.handle.net/10356/154561
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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Thambidurai, Muthuvelan | en_US |
dc.contributor.author | Foo, Shini | en_US |
dc.contributor.author | Kim, Jun Young | en_US |
dc.contributor.author | Lee, Changhee | en_US |
dc.contributor.author | Dang, Cuong | en_US |
dc.date.accessioned | 2021-12-28T06:33:28Z | - |
dc.date.available | 2021-12-28T06:33:28Z | - |
dc.date.issued | 2020 | - |
dc.identifier.citation | Thambidurai, M., Foo, S., Kim, J. Y., Lee, C. & Dang, C. (2020). Solution-processed Ga-TiO₂ electron transport layer for efficient inverted organic solar cells. Materials Letters, 274, 128003-. https://dx.doi.org/10.1016/j.matlet.2020.128003 | en_US |
dc.identifier.issn | 0167-577X | en_US |
dc.identifier.uri | https://hdl.handle.net/10356/154561 | - |
dc.description.abstract | To boost the charge transport and collection processes in inverted organic solar device, gallium (Ga) was added to conventional TiO₂ film to form the Ga-TiO₂ film. Compared to the pristine film, the Ga-TiO₂ film showed better energy level alignment, which is in good agreement with the heightened open-circuit voltage and fill factor. Attributed to the superior electron transport, the Ga-TiO₂ based solar cell achieved paramount power conversion efficiency (PCE) of 7.72%, while the pristine TiO₂ based solar cell showed lower PCE of 6.65%. | en_US |
dc.description.sponsorship | Ministry of Education (MOE) | en_US |
dc.language.iso | en | en_US |
dc.relation | MOE2019-T1-002-087 | en_US |
dc.relation.ispartof | Materials Letters | en_US |
dc.rights | © 2020 Elsevier B.V. All rights reserved. | en_US |
dc.subject | Engineering::Electrical and electronic engineering | en_US |
dc.title | Solution-processed Ga-TiO₂ electron transport layer for efficient inverted organic solar cells | en_US |
dc.type | Journal Article | en |
dc.contributor.school | School of Electrical and Electronic Engineering | en_US |
dc.contributor.school | School of Materials Science and Engineering | en_US |
dc.identifier.doi | 10.1016/j.matlet.2020.128003 | - |
dc.identifier.scopus | 2-s2.0-85085201590 | - |
dc.identifier.volume | 274 | en_US |
dc.identifier.spage | 128003 | en_US |
dc.subject.keywords | Electron Transport Layer | en_US |
dc.subject.keywords | Ga-Doped TiO₂ | en_US |
dc.description.acknowledgement | The research is supported by AcRF Tier1 grant (MOE2019-T1- 002-087) from Singapore Ministry of Education. | en_US |
item.grantfulltext | none | - |
item.fulltext | No Fulltext | - |
Appears in Collections: | EEE Journal Articles MSE Journal Articles |
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