Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/154965
Title: Non-linear thermal resistance model for the simulation of high power GaN-based devices
Authors: Garciá-Sánchez, S.
Iñiguez-de-la-Torre, I.
Pérez, S.
Ranjan, Kumud
Agrawal, Manvi
Lingaparthi, R.
Dharmarasu, Nethaji
Radhakrishnan, K.
Arulkumaran, Subramaniam
Ng, Geok Ing
González, T.
Mateos, J.
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2021
Source: Garciá-Sánchez, S., Iñiguez-de-la-Torre, I., Pérez, S., Ranjan, K., Agrawal, M., Lingaparthi, R., Dharmarasu, N., Radhakrishnan, K., Arulkumaran, S., Ng, G. I., González, T. & Mateos, J. (2021). Non-linear thermal resistance model for the simulation of high power GaN-based devices. Semiconductor Science and Technology, 36(5), 055002-. https://dx.doi.org/10.1088/1361-6641/abeb83
Project: NRF2017-NRFANR003
Journal: Semiconductor Science and Technology
Abstract: We report on the modeling of self-heating in GaN-based devices. While a constant thermal resistance is able to account for the self-heating effects at low power, the decrease of the thermal conductance of semiconductors when the lattice temperature increases, makes necessary the use of temperature dependent thermal resistance models. Moreover, in order to correctly account for the steep increase of the thermal resistance of GaN devices at high temperature, where commonly used models fail, we propose a non-linear model which, included in an electro-thermal Monte Carlo simulator, is able to reproduce the strongly non-linear behavior of the thermal resistance observed in experiments at high DC power levels. The accuracy of the proposed non-linear thermal resistance model has been confirmed by means of the comparison with pulsed and DC measurements made in devices specifically fabricated on doped GaN, able to reach DC power levels above 150 W mm-1 at biases below 30 V.
URI: https://hdl.handle.net/10356/154965
ISSN: 0268-1242
DOI: 10.1088/1361-6641/abeb83
Rights: © 2021 IOP Publishing Ltd. All rights reserved.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:TL Journal Articles

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