Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/154996
Title: Engineered ultraviolet InGaN/AlGaN multiple-quantum-well structures for maximizing cathodoluminescence efficiency
Authors: Zheng, Haiyang
Sharma, Vijay Kumar
Tsai, Ping Chieh
Zhang, Yiping
Lu, Shunpeng
Zhang, Xueliang
Tan, Swee Tiam
Demir, Hilmi Volkan
Keywords: Science::Physics
Engineering::Electrical and electronic engineering
Issue Date: 2022
Source: Zheng, H., Sharma, V. K., Tsai, P. C., Zhang, Y., Lu, S., Zhang, X., Tan, S. T. & Demir, H. V. (2022). Engineered ultraviolet InGaN/AlGaN multiple-quantum-well structures for maximizing cathodoluminescence efficiency. AIP Advances, 12(1), 015005-. https://dx.doi.org/10.1063/6.0001262
Journal: AIP Advances
Abstract: We demonstrate a systematic way to understand and select the accelerating voltage for maximizing cathodoluminescence (CL) by correlating the carrier diffusion length with the efficiency of ultraviolet InGaN/GaN multiple quantum wells (MQWs). We showed that the MQWs absorption benefits from the absorbed energy within the diffusion length below the MQWs. With this understanding, we have achieved a good agreement on the dependence of acceleration voltage and QW number in InGaN/GaN MQW structures between the experimental data and the Monte-Carlo (CASINO) simulations. These findings indicate that CL-based UV generation from carefully engineered III-N MWQ structures with an appropriate number of QWs is highly promising. The understanding and application of this work can be extended to electron-beam pumped devices emitting in deep-UV (200-280 nm) wavelengths.
URI: https://hdl.handle.net/10356/154996
ISSN: 2158-3226
DOI: 10.1063/6.0001262
Rights: © 2022 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles
SPMS Journal Articles

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