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Title: Grating and hole-array enhanced germanium lateral p-i-n photodetectors on an insulator platform
Authors: Zhou, Hao
Chen, Qimiao
Wu, Shaoteng
Zhang, Lin
Guo, Xin
Son, Bongkwon
Tan, Chuan Seng
Keywords: Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2022
Source: Zhou, H., Chen, Q., Wu, S., Zhang, L., Guo, X., Son, B. & Tan, C. S. (2022). Grating and hole-array enhanced germanium lateral p-i-n photodetectors on an insulator platform. Optics Express, 30(4), 4706-4717.
Project: NRF–CRP19–2017–01
2021-T1-002- 031 (RG112/21)
Journal: Optics Express
Abstract: Germanium (Ge) lateral p-i-n photodetectors with grating and hole-array structures were fabricated on a Ge-on-insulator (GOI) platform. Owing to the low threading dislocation density (TDD) in the transferred Ge layer, a low dark current of 0.279 μA was achieved at -1 V. The grating structure enhances the optical absorption by guiding the lateral propagation of normal incident light, contributing to a 3× improved responsivity at 1,550 nm. Compared with the grating structure, the hole-array structure not only guides the lateral modes but also benefits the vertical resonance modes. A 4.5× higher responsivity of 0.188 A/W at 1,550 nm was achieved on the 260 nm Ge absorptive layer. In addition, both the grating and the hole-array structure attribute to a 2× and a 1.6× enhanced 3dB bandwidth at -5 V due to significantly reduced capacitance. The planar configuration of 𝑝-𝑖-𝑛 photodiodes is favorable for large-scale monolithic integration. The incorporated surface structures offer promising approaches to reinforce the responsivity and bandwidth simultaneously, paving the way for the development of high-performance Ge photodetectors on silicon substrate.
ISSN: 1094-4087
DOI: 10.1364/OE.449326
Rights: © 2022 Optica Publishing Group under the terms of the Open Access Publishing Agreement. Users may use, reuse, and build upon the article, or use the article for text or data mining, so long as such uses are for noncommercial purposes and appropriate attribution is maintained. All other rights are reserved.
Fulltext Permission: open
Fulltext Availability: With Fulltext
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