Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/155166
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dc.contributor.authorQian, Kaien_US
dc.contributor.authorHan, Xuen_US
dc.contributor.authorLi, Huakaien_US
dc.contributor.authorChen, Tupeien_US
dc.contributor.authorLee, Pooi Seeen_US
dc.date.accessioned2022-02-11T04:42:16Z-
dc.date.available2022-02-11T04:42:16Z-
dc.date.issued2020-
dc.identifier.citationQian, K., Han, X., Li, H., Chen, T. & Lee, P. S. (2020). Uncovering the indium filament revolution in transparent bipolar ito/siox/ito resistive switching memories. ACS Applied Materials and Interfaces, 12(4), 4579-4585. https://dx.doi.org/10.1021/acsami.9b16325en_US
dc.identifier.issn1944-8244en_US
dc.identifier.urihttps://hdl.handle.net/10356/155166-
dc.description.abstractTransparent resistive switching random access memory (ReRAM) is of interest for the future integrated invisible circuitry. However, poor understanding of its working mechanism in transparent ReRAMs with the indium tin oxide (ITO) electrode is still a critical problem and will hinder its widespread applications. To reveal the actual working mechanism in transparent ReRAMs with the ITO electrode, we investigate the transparent ITO/SiOx/ITO memory devices (∼82% transmittance in the visible region) and compare it with ITO/SiOx/Au memory devices, which both can exhibit reproducible bipolar switching. The indium (In) filament evolution, which accounts for the bipolar switching behaviors in the ITO/SiOx/ITO (or Au) memories, is directly observed using transmission electron microscopy on samples with different memory states (electroformed, ON, and OFF). These studies uncover the microscopic mechanism behind the bipolar switching in SiOx-based ReRAM devices with the ITO electrode, providing a general guidance for the design of high-performance ReRAMs with large scalability and high endurance.en_US
dc.description.sponsorshipAgency for Science, Technology and Research (A*STAR)en_US
dc.description.sponsorshipNational Research Foundation (NRF)en_US
dc.language.isoenen_US
dc.relationI1801E0030en_US
dc.relationNRF-CRP13- 2014-02en_US
dc.relation.ispartofACS Applied Materials and Interfacesen_US
dc.rights© 2019 American Chemical Society. All rights reserved.en_US
dc.subjectEngineering::Electrical and electronic engineeringen_US
dc.titleUncovering the indium filament revolution in transparent bipolar ito/siox/ito resistive switching memoriesen_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.identifier.doi10.1021/acsami.9b16325-
dc.identifier.pmid31891483-
dc.identifier.scopus2-s2.0-85078664487-
dc.identifier.issue4en_US
dc.identifier.volume12en_US
dc.identifier.spage4579en_US
dc.identifier.epage4585en_US
dc.subject.keywordsTransparent ReRAMen_US
dc.subject.keywordsBipolar Switchingen_US
dc.description.acknowledgementThis work is supported by the National Research Foundation Competitive Research Programme (grant no. NRF-CRP13- 2014-02) and the RIE2020 ASTAR AME IAF-ICP Grant (No. I1801E0030). K.Q. acknowledges the “Qilu young scholar” program (grant no. 11500089963022) of Shandong University, China.en_US
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item.grantfulltextnone-
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