Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/155166
Title: Uncovering the indium filament revolution in transparent bipolar ito/siox/ito resistive switching memories
Authors: Qian, Kai
Han, Xu
Li, Huakai
Chen, Tupei
Lee, Pooi See
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2020
Source: Qian, K., Han, X., Li, H., Chen, T. & Lee, P. S. (2020). Uncovering the indium filament revolution in transparent bipolar ito/siox/ito resistive switching memories. ACS Applied Materials and Interfaces, 12(4), 4579-4585. https://dx.doi.org/10.1021/acsami.9b16325
Project: I1801E0030 
NRF-CRP13- 2014-02
Journal: ACS Applied Materials and Interfaces 
Abstract: Transparent resistive switching random access memory (ReRAM) is of interest for the future integrated invisible circuitry. However, poor understanding of its working mechanism in transparent ReRAMs with the indium tin oxide (ITO) electrode is still a critical problem and will hinder its widespread applications. To reveal the actual working mechanism in transparent ReRAMs with the ITO electrode, we investigate the transparent ITO/SiOx/ITO memory devices (∼82% transmittance in the visible region) and compare it with ITO/SiOx/Au memory devices, which both can exhibit reproducible bipolar switching. The indium (In) filament evolution, which accounts for the bipolar switching behaviors in the ITO/SiOx/ITO (or Au) memories, is directly observed using transmission electron microscopy on samples with different memory states (electroformed, ON, and OFF). These studies uncover the microscopic mechanism behind the bipolar switching in SiOx-based ReRAM devices with the ITO electrode, providing a general guidance for the design of high-performance ReRAMs with large scalability and high endurance.
URI: https://hdl.handle.net/10356/155166
ISSN: 1944-8244
DOI: 10.1021/acsami.9b16325
Rights: © 2019 American Chemical Society. All rights reserved.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles
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