Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/155640
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dc.contributor.authorKlein, Maciejen_US
dc.contributor.authorLi, Jiaen_US
dc.contributor.authorBruno, Annalisaen_US
dc.contributor.authorSoci, Cesareen_US
dc.date.accessioned2022-03-15T01:53:12Z-
dc.date.available2022-03-15T01:53:12Z-
dc.date.issued2021-
dc.identifier.citationKlein, M., Li, J., Bruno, A. & Soci, C. (2021). Co-evaporated perovskite light-emitting transistor operating at room temperature. Advanced Electronic Materials, 7(7), 2100403-. https://dx.doi.org/10.1002/aelm.202100403en_US
dc.identifier.issn2199-160Xen_US
dc.identifier.urihttps://hdl.handle.net/10356/155640-
dc.description.abstractSolution-processed hybrid organic–inorganic perovskite light-emitting transistors (PeLETs) suffer from low brightness and environmental instability induced by temperature-activated trapping, ionic motion, and polarization effects, which so far have been hindering the realization of devices operating at room temperature. Here high quality thermally co-evaporated methylammonium lead iodide perovskite films are employed to minimize ionic motion and significantly improve the electroluminescence characteristics of the perovskite active layer, enabling stable device operation up to ≈ 310 K. The demonstration of PeLETs operating at and beyond room-temperature paves the way for practical applications in the rapidly evolving area of solid-state lighting, active-matrix displays, and visible light communications.en_US
dc.description.sponsorshipAgency for Science, Technology and Research (A*STAR)en_US
dc.description.sponsorshipNational Research Foundation (NRF)en_US
dc.language.isoenen_US
dc.relationNRF-CRP14-2014-03en_US
dc.relationS18-1176-SCRPen_US
dc.relationA18A7b0058en_US
dc.relation.ispartofAdvanced Electronic Materialsen_US
dc.relation.uri10.21979/N9/YXYBGBen_US
dc.rightsThis is the peer reviewed version of the following article: Klein, M., Li, J., Bruno, A. & Soci, C. (2021). Co-evaporated perovskite light-emitting transistor operating at room temperature. Advanced Electronic Materials, 7(7), 2100403-, which has been published in final form at https://doi.org/10.1002/aelm.202100403. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions.en_US
dc.subjectScience::Physicsen_US
dc.titleCo-evaporated perovskite light-emitting transistor operating at room temperatureen_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen_US
dc.contributor.researchEnergy Research Institute @ NTU (ERI@N)en_US
dc.contributor.researchCentre for Disruptive Photonic Technologies (CDPT)en_US
dc.identifier.doi10.1002/aelm.202100403-
dc.description.versionSubmitted/Accepted versionen_US
dc.identifier.scopus2-s2.0-85107505724-
dc.identifier.issue7en_US
dc.identifier.volume7en_US
dc.identifier.spage2100403en_US
dc.subject.keywordsMethylammonium Lead Iodideen_US
dc.subject.keywordsCo-evaporated Perovskite Filmsen_US
dc.description.acknowledgementThis research was funded by National Research Foundation, Prime Minister’s Office, Singapore under its Competitive Research Programme (CRP Award No. NRF-CRP14-2014-03; Solar CRP: S18-1176-SCRP) and by the A*STAR-AME programmatic grant on Nanoantenna Spatial Light Modulators for Next-Gen Display Technologies (Grant No. A18A7b0058).en_US
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