Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/155872
Title: Solid-ionic memory in a van der Waals heterostructure
Authors: Chen, Jieqiong
Guo, Rui
Wang, Xiaowei
Zhu, Chao
Cao, Guiming
You, Lu
Duan, Ruihuan
Zhu, Chao
Hadke, Shreyash Sudhakar
Cao, Xun
Salim, Teddy
Buenconsejo, Pio John
Xu, Manzhang
Zhao, Xiaoxu
Zhou, Jiadong
Deng, Ya
Zeng, Qingsheng
Wong, Lydia Helena
Chen, Jingsheng
Liu, Fucai
Liu, Zheng
Keywords: Engineering::Electrical and electronic engineering::Nanoelectronics
Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Issue Date: 2022
Source: Chen, J., Guo, R., Wang, X., Zhu, C., Cao, G., You, L., Duan, R., Zhu, C., Hadke, S. S., Cao, X., Salim, T., Buenconsejo, P. J., Xu, M., Zhao, X., Zhou, J., Deng, Y., Zeng, Q., Wong, L. H., Chen, J., ...Liu, Z. (2022). Solid-ionic memory in a van der Waals heterostructure. ACS Nano, 16(1), 221-231. https://dx.doi.org/10.1021/acsnano.1c05841
Project: NRF-CRP22-2019-0007 
NRF-CRP21- 2018-0007 
MOE2018-T3-1-002 
MOE2016-T2-1- 131 
RG4/17 
RG7/18 
A2083c0052 
Journal: ACS Nano 
Abstract: Defect states dominate the performance of low-dimensional nanoelectronics, which deteriorate the serviceability of devices in most cases. But in recent years, some intriguing functionalities are discovered by defect engineering. In this work, we demonstrate a bifunctional memory device of a MoS2/BiFeO3/SrTiO3 van der Waals heterostructure, which can be programmed and erased by solely one kind of external stimuli (light or electrical-gate pulse) via engineering of oxygen-vacancy-based solid-ionic gating. The device shows multibit electrical memory capability (>22 bits) with a large linearly tunable dynamic range of 7.1 × 106 (137 dB). Furthermore, the device can be programmed by green- and red-light illuminations and then erased by UV light pulses. Besides, the photoresponse under red-light illumination reaches a high photoresponsivity (6.7 × 104 A/W) and photodetectivity (2.12 × 1013 Jones). These results highlighted solid-ionic memory for building up multifunctional electronic and optoelectronic devices.
URI: https://hdl.handle.net/10356/155872
ISSN: 1936-0851
DOI: 10.1021/acsnano.1c05841
Rights: This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Nano, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsnano.1c05841.
Fulltext Permission: embargo_20230202
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles
ERI@N Journal Articles
MSE Journal Articles

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