2D Cairo pentagonal PdPS : air-stable anisotropic ternary semiconductor with high optoelectronic performance

Abstract

Pentagonal 2D materials as a new member in the 2D material family have attracted increasing attention due to the exotic physical properties originating from the unique Cairo pentagonal tiling topology. Herein, the penta-PdPS atomic layers as a new air-stable 2D semiconductor with the unique puckered pentagonal low-symmetry structure are successfully exfoliated from bulk crystals grown via chemical vapor transport (CVT). Notably, 2D pentaPdPS exhibits outstanding electronic and optoelectronic performance under 650 nm laser: high electron mobility of ≈208 cm2 V−1 s−1, an ultrahigh on/off ratio of ≈108, a high photoresponsivity of 5.2 × 104 A W−1, a high photogain of 1.0 × 105, an ultrahigh detectivity of 1.0 × 1013 Jones, respectively. Significantly, the exceptional puckered pentagonal atomic structure of 2D PdPS makes it strong in-plane anisotropy in optical, electronic, and optoelectronic properties, demonstrating a sizeable anisotropic ratio of carrier mobility and photocurrent with the value of up to 3.9 and 2.3, respectively. These excellent properties make 2D Cairo Pentagonal PdPS a potential candidate in nanoelectronics, optoelectronics, polarized-nanoelectronics, which will significantly promote the development of 2D materials.