Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/156010
Title: Layer-engineered interlayer excitons
Authors: Tan, Qinghai
Abdullah Rasmita
Li, Si
Liu, Sheng
Huang, Zumeng
Xiong, Qihua
Yang, Shengyuan A.
Novoselov, K. S.
Gao, Weibo
Keywords: Science::Physics::Optics and light
Issue Date: 2019
Source: Tan, Q., Abdullah Rasmita, Li, S., Liu, S., Huang, Z., Xiong, Q., Yang, S. A., Novoselov, K. S. & Gao, W. (2019). Layer-engineered interlayer excitons. Science Advances, 7(30), eabh0863-. https://dx.doi.org/10.1126/sciadv.abh0863
Journal: Science Advances 
Abstract: Photoluminescence (PL) from excitons serves as a powerful tool to characterize the optoelectronic property and band structure of semiconductors, especially for atomically thin 2D transition metal chalcogenide (TMD) materials. However, PL quenches quickly when the thickness of TMD material increases from monolayer to few-layers, due to the change from direct to indirect band transition. Here we show that PL can be recovered by engineering multilayer heterostructures, with the band transition reserved to be direct type. We report emission from layer engineered interlayer excitons from these multilayer heterostructures. Moreover, as desired for valleytronic devices, the lifetime, valley polarization, and the valley lifetime of the generated interlayer excitons can all be significantly improved as compared with that in the monolayer-monolayer heterostructure. Our results pave the way for controlling the properties of interlayer excitons by layer engineering.
URI: https://hdl.handle.net/10356/156010
ISSN: 2375-2548
DOI: 10.1126/sciadv.abh0863
Rights: © 2021 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:SPMS Journal Articles

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