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Title: Donor-acceptor pair quantum emitters in hexagonal boron nitride
Authors: Tan, Qinghai
Lai, Jia-Min
Liu, Xue-Lu
Guo, Dan
Xue, Yongzhou
Dou, Xiuming
Sun, Bao-Quan
Deng, Hui-Xiong
Tan, Ping-Heng
Aharonovich, Igor
Gao, Weibo
Zhang, Jun
Keywords: Science::Physics::Optics and light
Issue Date: 2022
Source: Tan, Q., Lai, J., Liu, X., Guo, D., Xue, Y., Dou, X., Sun, B., Deng, H., Tan, P., Aharonovich, I., Gao, W. & Zhang, J. (2022). Donor-acceptor pair quantum emitters in hexagonal boron nitride. Nano Letters, 22(3), 1331-1337.
Project: NRF2021- QEP2-03-P01 
2019-0643 (QEP-P2) 
2019-1321 (QEPP3) 
NRF-CRP22- 2019-0004 
Journal: Nano Letters 
Abstract: Quantum emitters are needed for a myriad of applications ranging from quantum sensing to quantum computing. Hexagonal boron nitride (hBN) quantum emitters are one of the most promising solid-state platforms to date due to their high brightness and stability and the possibility of a spin-photon interface. However, the understanding of the physical origins of the single-photon emitters (SPEs) is still limited. Here we report dense SPEs in hBN across the entire visible spectrum and present evidence that most of these SPEs can be well explained by donor-acceptor pairs (DAPs). On the basis of the DAP transition generation mechanism, we calculated their wavelength fingerprint, matching well with the experimentally observed photoluminescence spectrum. Our work serves as a step forward for the physical understanding of SPEs in hBN and their applications in quantum technologies.
ISSN: 1530-6992
DOI: 10.1021/acs.nanolett.1c04647
Schools: School of Physical and Mathematical Sciences 
Rights: This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:SPMS Journal Articles

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