Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/156017
Title: High resolution front-side visualization of charge stored in EEPROM with scanning nonlinear dielectric microscopy (SNDM)
Authors: Zeng, Xiaomei
Liu, Qing
Tay, Jing Yun
Chew, Kai Yang
Cheah, Jun Wei
Gan, Chee Lip
Keywords: Engineering::Materials::Testing of materials
Issue Date: 2021
Source: Zeng, X., Liu, Q., Tay, J. Y., Chew,  ., Cheah, J. W. & Gan, C. L. (2021). High resolution front-side visualization of charge stored in EEPROM with scanning nonlinear dielectric microscopy (SNDM). Nanotechnology, 32(48), 485201-. https://dx.doi.org/10.1088/1361-6528/ac1ebd
Project: NRF2018NCR-NCR009-0001 
Journal: Nanotechnology 
Abstract: By exposing floating gates of EEPROM memory cells with frontside sample preparation, scanning nonlinear dielectric microscopy (SNDM) succeeded in reading back the data stored in the memory cells with a 250 nm node size. At an optimized voltage bias of AC = 3 V and DC = 1 V, a clear signal contrast between programmed and erased cells is obtained. The high resolution SNDM signal reveals the details of bowling-pin shape structure of memory cells, providing high confidence in data assignment during forensic applications. Such high resolution also makes SNDM a promising technique for newer generation devices with smaller node size.
URI: https://hdl.handle.net/10356/156017
ISSN: 0957-4484
DOI: 10.1088/1361-6528/ac1ebd
Rights: © 2021 IOP Publishing Ltd. All rights reserved.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MSE Journal Articles
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