Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/156017
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dc.contributor.authorZeng, Xiaomeien_US
dc.contributor.authorLiu, Qingen_US
dc.contributor.authorTay, Jing Yunen_US
dc.contributor.authorChew, Kai Yangen_US
dc.contributor.authorCheah, Jun Weien_US
dc.contributor.authorGan, Chee Lipen_US
dc.date.accessioned2022-03-31T01:55:25Z-
dc.date.available2022-03-31T01:55:25Z-
dc.date.issued2021-
dc.identifier.citationZeng, X., Liu, Q., Tay, J. Y., Chew,  ., Cheah, J. W. & Gan, C. L. (2021). High resolution front-side visualization of charge stored in EEPROM with scanning nonlinear dielectric microscopy (SNDM). Nanotechnology, 32(48), 485201-. https://dx.doi.org/10.1088/1361-6528/ac1ebden_US
dc.identifier.issn0957-4484en_US
dc.identifier.urihttps://hdl.handle.net/10356/156017-
dc.description.abstractBy exposing floating gates of EEPROM memory cells with frontside sample preparation, scanning nonlinear dielectric microscopy (SNDM) succeeded in reading back the data stored in the memory cells with a 250 nm node size. At an optimized voltage bias of AC = 3 V and DC = 1 V, a clear signal contrast between programmed and erased cells is obtained. The high resolution SNDM signal reveals the details of bowling-pin shape structure of memory cells, providing high confidence in data assignment during forensic applications. Such high resolution also makes SNDM a promising technique for newer generation devices with smaller node size.en_US
dc.description.sponsorshipNational Research Foundation (NRF)en_US
dc.language.isoenen_US
dc.relationNRF2018NCR-NCR009-0001en_US
dc.relation.ispartofNanotechnologyen_US
dc.rights© 2021 IOP Publishing Ltd. All rights reserved.en_US
dc.subjectEngineering::Materials::Testing of materialsen_US
dc.titleHigh resolution front-side visualization of charge stored in EEPROM with scanning nonlinear dielectric microscopy (SNDM)en_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.contributor.researchTemasek Laboratories @ NTUen_US
dc.identifier.doi10.1088/1361-6528/ac1ebd-
dc.identifier.issue48en_US
dc.identifier.volume32en_US
dc.identifier.spage485201en_US
dc.subject.keywordsFloating Gate of EEPROMen_US
dc.subject.keywordsFront-Side Sample Preparationen_US
dc.subject.keywordsScanning Nonlinear Dielectric Microscopyen_US
dc.subject.keywordsData Retrievalen_US
dc.description.acknowledgementThis research is supported by the National Research Foundation, Singapore, under its National Cybersecurity Research & Development Programme / Cyber-Hardware Forensic & Assurance Evaluation R&D Programme (Award: NRF2018NCR-NCR009-0001)en_US
item.fulltextNo Fulltext-
item.grantfulltextnone-
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